Low-power-consumption semiconductor memory and driving method thereof

Abstract

The invention relates to a low-power-consumption semiconductor memory, and a manufacturing method and a driving method thereof. The low-power-consumption semiconductor memory comprises a memory transistor and a control transistor, wherein the control transistor comprises an input end and an output end; the output end of the control transistor is connected with the body region of the memory transistor; and when the control transistor is started, the input voltage loaded by the input end of the control transistor is output to the body region of the memory transistor, so that the electric potential of the body region of the memory transistor is changed and is used for marking memory data. In the low-power-consumption semiconductor memory, data reading / writing operation of the memory is controlled by adopting a vertical tunneling field effect transistor, so that the minimum starting voltage of the memory is reduced and the switching speed of a device is increased; and the data storage condition is marked by changing the electric potential of the body region of the memory transistor and the requirement on the charging current during data writing operation is reduced by the parasitic capacitance of the smaller body region, so that power consumption of the device is effectively reduced.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, and more specifically, the present invention relates to a low-power semiconductor memory, a manufacturing method and a driving method thereof. Background technique [0002] With the continuous advancement of integrated circuit technology, the number of semiconductor devices integrated on the same chip has evolved from the initial tens of hundreds to the present millions. In particular, for semiconductor memory, its monolithic integration density has reached hundreds of millions. [0003] However, while the integration density of the semiconductor memory is increasing day by day, its power consumption also increases correspondingly, which is mainly caused by the gate capacitance of the semiconductor memory. The semiconductor memory in the prior art usually uses charge injection into the floating gate to complete data storage, and the gate of the semiconductor memory has a large gat...

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Problems solved by technology

[0003] However, while the integration density of the semiconductor memory is increasing day by day, its power consumption is also correspondingly increased, which is mainly caused by the gate capacitance of the semiconductor memory

The semiconductor memory in the prior art usually uses charge injection into the floating gate to complete data storage, and the gate of the semiconductor memory has a large gate capacitance, and the charging and discharging operation of the gate capacitance greatly increases the power of the device. consumption

At the same time, since the sub-threshold swing of the MOS transistor used in the semiconductor memory is relatively small, this makes its drive current weak when driven at low voltage, which in turn causes a decline in the read and write speed of the semiconductor memory.

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