Surface modified heat conduction particles, preparation method, and application thereof
A heat-conducting particle and surface modification technology, applied in chemical instruments and methods, heat exchange materials, electrolysis process, etc., can solve the problem of inability to uniformly modify the surface of heat-conducting particles, shorten the preparation process time, and increase the degree of surface modification of heat-conducting particles To achieve the effect of improving heat dissipation efficiency and reliability, shortening the preparation process time, and increasing the probability of coupling reaction
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[0073] Accordingly, the present invention also provides a method for preparing a thermal interface material, which includes the following steps:
[0074] Provide a plurality of thermally conductive particles; perform an electrochemical pretreatment step on the thermally conductive particles to increase the surface -OH groups; mix the electrochemically pretreated thermally conductive particles with a coupling agent to make the surface of the thermally conductive particles -OH groups react with the coupling agent to prepare and obtain surface-modified heat-conducting particles; and doping the surface-modified heat-conducting particles on a polymer carrier to obtain the heat-conducting dopant doped The thermal interface material, wherein the thermally conductive dopant includes the surface modified thermally conductive particles.
[0075] Compared with the known thermal interface materials that are only doped with non-surface-modified thermally conductive particles (such as alumi...
Embodiment 1
[0097] See image 3 , is the flow chart of the preparation of the thermal interface material of this embodiment.
[0098] First, if image 3 As shown in step S11, a plurality of heat-conducting particles are provided, and electrochemical pretreatment is performed on these heat-conducting particles. In detail, as Figure 4 As shown, in this embodiment, 50 grams of heat-conducting particles 23 are dispersed in an aqueous solution 24 (pH=7) containing 150 milliliters of hydrogen peroxide, 850 milliliters of water, and 3 grams of NaCl electrolyte, and boron doped diamond (boron doped diamond) is used , BDD) electrode and graphite electrode were used as anode 25 and cathode 26 respectively, and were stirred with magnet 27 at room temperature for electrochemical treatment for about 3 hours. These boron-doped diamond electrodes are formed by coating a layer of boron-doped diamond with a thickness of about 10 microns on a 10 cm square silicon chip by hot filament chemical vapor dep...
Embodiment 2
[0105] The preparation process of the thermal interface material in this embodiment is roughly the same as that described in Embodiment 1, except for the differences as follows.
[0106] In this embodiment, diamond particles with a particle size of 15 to 25 microns are used as heat-conducting particles. When performing electrochemical pretreatment, 50 grams of heat-conducting particles are dispersed in a mixture containing 225 milliliters of hydrogen peroxide, 775 milliliters of water, and 3.5 grams of NaCl. In the aqueous solution, the electrochemical treatment was carried out for about 5 hours.
[0107] If these electrochemically pretreated heat-conducting particles ( Figure 6A ), and with the same heat-conducting particles without pretreatment ( Figure 6B ) comparison, it can be found that the former is at about 1380cm -1 There is an obvious characteristic peak at , which can be attributed to the newly generated C-OH bond, which means that there are more -OH groups on t...
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