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Photoresist composition, and preparation method and application thereof

A photoresist and composition technology, which is applied in the directions of optomechanical equipment, photosensitive materials for optomechanical equipment, optics, etc., can solve the problems of uneven and smooth edges of lines, low lithography resolution, and high lithography resolution. , to achieve the effect of flat and smooth line edges and improved lithography resolution

Active Publication Date: 2012-03-21
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The first aspect object of the present invention is to provide a kind of photoresist composition, the lithography resolution of this photoresist composition is high, has solved the photoresist photoresist resolution low in the prior art, the lithography is small The technical problem that the edge of the line is often uneven and smooth when measuring the size of the device

Method used

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  • Photoresist composition, and preparation method and application thereof
  • Photoresist composition, and preparation method and application thereof
  • Photoresist composition, and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0054] Dissolve 0.01g of cesium iodide in 0.5mL of ethylene glycol methyl ether to obtain a solution of cesium iodide in ethylene glycol methyl ether, and then add the solution of cesium iodide in ethylene glycol methyl ether to 2.5mL of AZ 4330 type positive In the photoresist, the ethylene glycol methyl ether solution of cesium iodide and the positive photoresist of AZ 4330 type are ultrasonically treated with SKD-1001 portable ultrasonic cleaning machine, so that cesium iodide is incorporated into the photoresist AZ In 4330, reheat to 80°C and keep for 30 minutes to remove ethylene glycol methyl ether to obtain a photoresist composition. Drop this photoresist composition onto the cleaned silicon wafer, and use a glue shaker to shake the glue. The speed of the glue shaker is 4500rpm, and the glue throwing time is 30s, and then pre-baked at 80°C for 30min, and then Exposure, the exposure light source is a high-pressure mercury lamp, the exposure time is 10s, there are small l...

Embodiment 2

[0059] Dissolve 0.005g cesium chloride in 0.5mL ethylene glycol butyl ether to obtain cesium chloride ethylene glycol butyl ether solution, then add cesium chloride ethylene glycol butyl ether solution to 2.5mL AZ 4330 type positive positive In the photoresist, the ethylene glycol butyl ether solution of cesium chloride and the positive photoresist of the AZ 4330 type are ultrasonically treated with the SKD-1001 ultrasonic cleaning machine, so that the cesium chloride is incorporated into the photoresist AZ 4330 , then heated to 80° C., kept for 30 minutes, and ethylene glycol butyl ether was removed to obtain a photoresist composition. Drop this photoresist composition onto the cleaned silicon wafer, and use a glue shaker to shake the glue. The speed of the glue shaker is 4500rpm, and the glue throwing time is 30s, and then pre-baked at 80°C for 30min, and then Exposure, the exposure light source is a high-pressure mercury lamp, the exposure time is 10s, there are small lines...

Embodiment 3

[0064] Take 0.5mL of diethylene glycol monobutyl ether and dissolve 0.005g of yttrium borate to obtain the diethylene glycol monobutyl ether solution of yttrium borate, then add the diethylene glycol monobutyl ether solution of yttrium borate to 5mL of AZ P4903 type In the positive photoresist, use the M08-01 magnetic stirrer to stir the diethylene glycol monobutyl ether solution of yttrium borate and the AZ P4903 positive photoresist, and the stirring speed is the maximum of the M08-01 magnetic stirrer. The stirring speed was set to 10 minutes, so that yttrium borate was incorporated into the photoresist AZ P4903, and then heated to 90° C., kept for 45 minutes, and diethylene glycol monobutyl ether was removed to obtain a photoresist composition. Drop this photoresist composition onto the cleaned silicon wafer, and use a glue shaker to shake the glue. The speed of the glue shaker is 4500rpm, and the glue throwing time is 30s, and then pre-baked at 80°C for 30min, and then Exp...

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Abstract

The invention relates to a photoresist composition, and further to a preparation method of the photoresist composition, as well as to the application of the photoresist composition. The photoresist composition provided in the invention comprises a photoresist and metal salt type photoluminescent ions, wherein the photoresist serves as a continuous phase, while the metal salt type photoluminescentions serve as a dispersed phase; and the mass-volume concentration of the metal salt type photoluminescent ions in the photoresist is 0.0005-0.004 g / mL. The preparation method of the photoresist composition comprises the following steps of: dissolving the metal salt type photoluminescent ions using an organic solvent at first, and then mixing the solution with the photoresist; and after even mixing, evaporating the organic solvent through heating. Besides, the photoresist composition is applied to integrated circuit photoetching. The photoresist composition solves the technical problem of lowphotoetching resolution ratio of the photoresist and the technical problem that the line edge is always out of flatness and unsmooth during the photoetching of a small-sized device in the prior art.

Description

technical field [0001] The invention relates to a photoresist composition, a preparation method of the photoresist composition, and an application of the photoresist composition. Background technique [0002] Photolithography technology is one of the key technologies of integrated circuits and the "leader" of the semiconductor industry. Photolithography is an important reason for the development of integrated circuits in accordance with Moore's Law. Without the advancement of photolithography technology, it is impossible for integrated circuits to go from micron to deep submicron and then into the nanometer era. Photolithography determines the critical dimensions of the device. An important sign of whether the lithography technology is advanced or not is the lithography resolution. The lithography resolution is the most important index to determine the lithography system, and it is also the factor that determines the minimum feature size of the chip. The higher the lithog...

Claims

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Application Information

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IPC IPC(8): G03F7/004G03F7/039H01L21/027
Inventor 张亚非陶焘魏浩胡南滔
Owner SHANGHAI JIAO TONG UNIV
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