Method for preventing metal target from breakdown during physical vapor deposition sputtering process

A technology of physical vapor deposition and sputtering process, which is applied in the field of semiconductor manufacturing to avoid unnecessary losses and prevent poor target quality

Active Publication Date: 2012-05-09
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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  • Method for preventing metal target from breakdown during physical vapor deposition sputtering process
  • Method for preventing metal target from breakdown during physical vapor deposition sputtering process
  • Method for preventing metal target from breakdown during physical vapor deposition sputtering process

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Embodiment Construction

[0021] The present invention will be further described below in combination with principle diagrams and specific operation examples.

[0022] Such as figure 1 As shown, the method for preventing metal targets from being punctured during the physical vapor deposition sputtering process of the present invention is completed based on a sputter coating device. The sputter coating device includes a vacuum chamber 1, an anode 2 and an anode disposed in the vacuum chamber 1 Cathode target material 3, coating product and gas supply system, gas supply system comprises air inlet 7 and the gas supply channel that connects external gas source and air inlet 7, target 3, plasma 4 and crystal placed on substrate 5 The circle (not marked in the figure) forms a path with the power supply 6, negative voltage is applied to one end of the target 3, and the base 5 is grounded. In addition, the target 3 is provided with a ground shield 31, and the outlet 8 in the figure is connected to an external ...

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Abstract

The present invention discloses a method for preventing a metal target from breakdown during a physical vapor deposition (PVD) sputtering process. The method is completed based on a sputtering film plating apparatus, and comprises the following steps: applying negative voltage on one end of a target, connecting a substrate with the ground; real-timely tracking the data of the voltage V and the current I in the PVD metal sputtering process, and calculating R according to the following formula: R=V/I, wherein the R value represents the virtual thickness value of the target, the upper limit value of the R value and the lower limit value of the R value are set, if the R value exceeds the limit value, an alarm mechanism is started; determining the correlation between the target thickness and the target life time of the machine, fitting the specific calculation relationship between the target thickness and the target life time of the machine in a value manner during the whole service life period of the target; educing a correlation factor by the calculation relationship; setting the upper limit value of the correlation factor and the lower limit value of the correlation factor in the system, wherein the alarm mechanism is started if the correlation factor value exceeds the limit value. According to the present invention, the target thickness is real-timely monitored, such that the occurrence of abnormal situations such as poor target quality, mistake of target replacement, excessive target using, and the like can be effectively prevented so as to avoid a plurality of unnecessary losses.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preventing a metal target from being broken down during a physical vapor deposition sputtering process. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) technology is widely used in the field of semiconductor manufacturing, methods include vacuum evaporation, sputtering coating, molecular beam epitaxy, etc., among which sputtering coating is the most widely used in metal thin film process. The basic principle of sputtering coating is to make the argon gas glow discharge under the vacuum condition filled with argon gas (Ar), at this time, the argon atoms (Ar) are ionized into argon ions (Ar+), and under the action of the electric field force, the bombardment is accelerated The cathode target is made of plating material, and the target particles are sputtered out and deposited on the surface of the wafer. [...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/54
Inventor 杨奕韩晓刚陈建维
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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