Multi-piece multi-source horizontal hydride vapor phase epitaxy growth system

A hydride gas phase and epitaxial growth technology, which is applied in the growth of polycrystalline materials, single crystal growth, crystal growth, etc., can solve the problems that cannot meet the growth requirements of large quantities of GaN-based thick film materials
CN102465337AActive Publication Date: 2012-05-23NANJING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV
Publication Date
2012-05-23

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Abstract

The invention relates to a multi-piece multi-source horizontal hydride vapor phase epitaxy growth system, wherein a reaction chamber is of a horizontal structure, a graphite support is arranged in a growth region, different reaction sources are respectively provided with independent input pipelines, and epitaxy growth substrates are arranged on the graphite support. The multi-piece multi-source horizontal hydride vapor phase epitaxy (HVPE) growth system provided by the invention realizes large-scale application of GaN-based material growth and has the capability of growing multiple pieces of large-area GaN-based materials in one step.
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Description

Technical field

[0001] The invention relates to a method and device for growing semiconductor materials such as GaN-based materials by multi-sheet hydride vapor phase epitaxy (HVPE), and is a multi-sheet multi-source horizontal hydride vapor phase epitaxy growth system. Background technique

[0002] Group III-V nitride materials (also known as GaN-based materials) based on GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have received much attention internationally in recent years. GaN-based materials are direct bandgap wide bandgap semiconductor materials, with a continuously variable direct band gap between 1.9-6.2eV, excellent physical and chemical stability, high saturation electron drift speed, high breakdown field strength and high thermal conductivity It has important applications in the preparation of short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage, and high-temperature microelectronic devices. It is used to...

Claims

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