VDMOS (Vertical Double-diffusion Metal Oxide Semiconductor Structure) device and manufacturing method thereof

Abstract

The embodiment discloses a VDMOS (Vertical Double-diffusion Metal Oxide Semiconductor Structure) device and a manufacturing method thereof. The device comprises a substrate, an isolating area, a first body area, a second body area, a first source area, a second source area and a gate area, wherein the substrate comprises a body layer and an epitaxial layer positioned above the body layer; the body layer comprises a drain area; the isolating area is positioned in the epitaxial layer; the first body area and the second body area are positioned in the epitaxial layer at two sides of the isolating area; the first source area is positioned in the first body area; the second source area is positioned in the second body area; and the gate area is positioned between the first source area and the second source area and above the isolating area. The insulated isolating area is formed in the epitaxial layer between the first body area and the second body area, a transition zone where a conductive channel diffuses toward the epitaxial layer area between the first body area and the second body area is eliminated, a parasitic resistor of the VDMOS device is eliminated, the total conduction resistor of the device is reduced, and the electricity of the device is improved. In addition, because of the disappearance of the parasitic resistor, the occupation area of the device cell is reduced, and the utilization ratio of the substrate surface is improved.

Description

Technical field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and more specifically, to a VDMOS device and a manufacturing method thereof. Background technique

[0002] With the continuous development of semiconductor technology, VDMOS (Vertical Double-diffuse MOS) devices have low switching loss, high input impedance, low drive power, good frequency characteristics, and highly linear transconductance. And other advantages, are more and more widely used in analog circuits and drive circuits, especially high-voltage power parts.

[0003] The existing VDMOS device structure is as figure 1 As shown, take the N-type VDMOS device as an example, including:

[0004] A substrate, the substrate includes a body layer 101 and an epitaxial layer 102 on the body layer, the body layer 101 includes a drain region, wherein the body layer 101 and the epitaxial layer 102 are N-type doped;

[0005] The first body region 103 and the second body region 104 lo...

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