Model compensating method for controlling thin film deposition rate in physical gaseous phase thin film deposition process
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 上海鼎弈材料科技有限公司
- Publication Date
- 2013-07-31
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for controlling the film deposition rate of a physical vapor deposition process. Background technique
[0002] The physical vapor phase thin film deposition process is usually used to prepare high-quality conductive thin film materials, which require precise control of film thickness and material properties. However, the deposition rate of the film will deviate significantly with the consumption of the target material, which will affect the precise control of the film thickness, and cause the intrinsic performance of the material and its device characteristics to deviate from the design requirements. In the existing technology, real-time monitoring and dynamic compensation of the deposition rate of the film is an effective method to obtain a stable film deposition rate, but the cost of this dynamic feedback compensation system is high, and the online...