A polishing slurry for polishing titanium-containing substrates

Abstract

A polishing slurry for polishing a titanium-containing base material of the present invention includes one or more amino acids, deionized water and abrasive particles; the polishing slurry is used for polishing the titanium-containing base material. The removal rate of titanium / titanium nitride is relatively high when the polishing slurry for polishing titanium-containing substrates is used to polish the titanium-containing substrates.

Description

technical field [0001] The invention relates to a polishing agent, in particular to a polishing slurry for polishing a titanium-containing substrate. Background technique [0002] In modern semiconductor manufacturing processes, an integrated circuit often contains millions of electronic components, which are interconnected and mounted on a silicon substrate through multilayer interconnects, and are interconnected with each other through metal vias or contacts , to form a fully functional circuit. [0003] In current semiconductor manufacturing, titanium or titanium nitride is commonly used as a filler metal for metal vias or contacts. Since titanium or its alloys play an important role in the entire semiconductor manufacturing process, how to ensure the flatness of the titanium or its alloy surface after polishing is an important link in the semiconductor manufacturing process. [0004] In the polishing process of the entire semiconductor substrate, the chemical mechanica...

AI Technical Summary

Problems solved by technology

The polishing performance of titanium is quite different from ordinary aluminum, copper, etc. Titanium generally does not undergo oxidation reaction, and the use of ordinary polishing liquid cannot achieve a good polishing effect

[0007] During the polishing process of titanium, Delaware Rodell Company of the United States uses a harder polishing pad, which can effectively remove titanium, but scratches appear on titanium after polishing. Substrate surface flatness is low

Chinese patent CN1194453C provides a polishing liquid with oxalic acid, water and alumina abrasive particles as main components; % of oxidizing agent, 0.1~5wt% of complexing agent, 0.1~5wt% of chelating agent and the balance of water, wherein the grinding agent is more than 90m 2 Fumed silicon oxide / g surface area and only being exposed to acidic pH is the main component; U.S. Patent US6001269 provides a kind of titanium metal polishing liquid comprising the known abrasive composition of iodate-based oxidizing agent, but adopts the above-mentioned patent Polishing fluid, grooves appear on the surface of titanium, and the surface flatness of the substrate is low, which affects the reliability and stability of integrated circuits, and the removal rate of titanium is low during the polishing process