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Method for preparing microcrystalline silicon film by plasma-enhanced chemical vapor deposition

A technology of microcrystalline silicon thin film and plasma, which is applied in the field of plasma enhanced chemical vapor deposition of microcrystalline silicon thin film, can solve the problems of slow deposition rate and small grain size of microcrystalline silicon thin film

Active Publication Date: 2014-02-19
BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0014] However, the ordinary plasma-enhanced chemical vapor deposition method, the deposition rate of the microcrystalline silicon film is relatively slow, and the crystal grains are small.

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  • Method for preparing microcrystalline silicon film by plasma-enhanced chemical vapor deposition
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  • Method for preparing microcrystalline silicon film by plasma-enhanced chemical vapor deposition

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Embodiment Construction

[0042] The invention provides an atomic layer deposition device with an arrayed hollow cathode structure. The set of devices includes a gas distribution system 1, a vacuum chamber 2, an array type hollow cathode upper electrode 3, a flat plate type grounded lower electrode 4, a vacuum system 5, and a power supply system 6. Utilizing the hollow cathode discharge effect of the arrayed hollow cathode upper electrode 3, the ionization efficiency of the gas can be greatly improved, the pressure of the discharge gas and the plasma density can be increased, and the activation efficiency of the reaction monomer in the atomic layer deposition process can be improved, and the space can be increased. The concentration of active groups in the film can greatly increase the deposition rate of the film and reduce the deposition temperature. The measurement results show that this array type hollow discharge can increase the plasma density to 10 11 ~10 13 / cm 3 , reduce the plasma energy be...

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Abstract

The invention relates to a method for preparing a microcrystalline silicon film by plasma-enhanced chemical vapor deposition, belonging to the technical field of plasma application. The invention relates to a method for preparing the microcrystalline silicon film by the chemical vapor deposition technology which adopts a hollow cathode to enhance plasma, in particular to the technology which utilizes a micro-hollow cathode array electrode structure to increase the density of the plasma so as to further improve the deposition rate of the film. After the micro-hollow cathode array electrode structure is adopted, the discharge efficiency is improved, the monomer pyrolysis rate is further improved, and the density of active groups in the space can be increased, so that the deposition rate of the film is greatly improved, and the deposition temperature is reduced.

Description

Technical field: [0001] The invention relates to a method for preparing a microcrystalline silicon thin film by adopting a hollow cathode enhanced plasma chemical vapor deposition process, in particular, the use of a micro-hollow cathode array electrode structure can increase the plasma density and further increase the deposition rate of the thin film. Background technique: [0002] Solar cells can directly convert solar energy into electrical energy by using the photovoltaic effect, which is one of the most ideal new energy sources. As a high-efficiency and low-cost solar cell material, silicon-based thin films have become a research hotspot in this field. People found that microcrystalline silicon cells have better performance and lower cost in the process of preparing amorphous silicon thin films. When preparing an amorphous silicon film, changing the growth conditions of the film can crystallize part of the silicon in the film into small grains. This thin film, contain...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/50C23C16/24
Inventor 陈强杨丽珍王正铎刘忠伟张春梅张受业
Owner BEIJING INSTITUTE OF GRAPHIC COMMUNICATION