Preparation method for high-power terahertz quantum cascade laser

Abstract

The invention provides a preparation method for a high-power terahertz quantum cascade laser, which comprises the following steps: a plurality of electricity transmission and output gain characteristics of a predetermined structural active area under different parameters can be simulated based on a monte carlo simulation method, thereby obtaining a group of optimized parameters; and the terahertz quantum cascade laser with the predetermined structural active area can be prepared based on the obtained one group of parameters. The high-power terahertz quantum cascade laser is prepared based on the parameters obtained by the Monte Carlo simulation method and can output larger-maser luminous power due to the optimized parameters.

Description

technical field [0001] The invention relates to the field of lasers, in particular to a preparation method of a high-power terahertz quantum cascade laser. Background technique [0002] Terahertz (THz) radiation sources are key devices for applications in the THz band. Among the many terahertz radiation generation methods, the semiconductor-based all-solid-state terahertz quantum cascade laser device (THzQCL) has attracted widespread attention once it was invented due to its advantages such as high energy conversion efficiency, small size, portability and easy integration. become a research hotspot in this field. [0003] THzQCL is a coherent THz radiation source for unipolar intersubband transitions, which has the advantages of all-solid-state, electrically pumped, tunable, and easy-to-integrate. Compared with mid-infrared QCL, THz photon energy is small, the energy difference between corresponding laser energy levels is small, and the scattering effect between subbands i...

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Problems solved by technology

[0005] However, since the output power of terahertz quantum cascade laser devices is often affected by many factors such as injection and collection barrier width, doping concentration, injection coupling strength, temperature, etc., too wide a potential barrier will affect the injection and collection of electrons. Efficiency, too thin a potential barrier will lead to excessive device current and severe heating; too high doping will lead to large current and high heat, which will affect the operation of the device; zero doping will lead to zero gain of the device; too weak injection coupling strength will cause As a result, the injection efficiency is not high enough to achieve lasing, and the injection coupling strength is too high, which will split the gain spectrum, thereby affecting the peak power of the device

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