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Organic acidic matter-containing chemical mechanical polishing solution

A chemical-mechanical and organic-acidic technology, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc., can solve the problems of insufficient removal rate and impact on yield, so as to improve the silicon polishing rate and increase the Yield, effect of high removal rate

Inactive Publication Date: 2012-07-11
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology

The above-mentioned polishing liquid either focuses on the removal of transition metal residues, or on the selectivity ratio of polysilicon to silicon oxide, or on the use of ultra-low concentration polishing particles, but does not mention the application in TSV silicon polishing of 3D packaging, and According to the public information, even the TSV silicon polishing applied to 3D packaging still has an obvious insufficient removal rate, which seriously affects the yield

Method used

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  • Organic acidic matter-containing chemical mechanical polishing solution
  • Organic acidic matter-containing chemical mechanical polishing solution
  • Organic acidic matter-containing chemical mechanical polishing solution

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Embodiment 1~4

[0032] Table 1 shows the chemical mechanical polishing liquids 1 to 4 containing organic acidic substances and the comparative polishing liquids of the present invention. According to the formula in the table, the ingredients are mixed uniformly, deionized water makes up 100% by mass, and finally pH regulator is used (20%KOH or dilute HNO 3 , Choose according to the needs of pH value) Adjust to the required pH value, continue to stir to a uniform fluid, and stand for 30 minutes to obtain a chemical mechanical polishing liquid containing organic acid substances.

[0033] Under the same polishing conditions, the polishing liquids 1 to 4 of the present invention and the comparative polishing liquids in Table 1 were used to polish the silicon substrate respectively. The polishing parameters are as follows: Logitech. polishing pad, downward pressure 3~6psi, turntable speed / polishing head speed=60 / 80rpm, polishing time 120s, flow rate of chemical mechanical polishing liquid containing o...

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Abstract

The invention provides organic acidic matter-containing chemical mechanical polishing solution for polishing through silicon via (TSV) for 3D package, which comprises grinding particles and an organic acidic matter, and further comprises a pH regulator, a surfactant, a stabilizer, an inhibitor and a bactericide. The organic acidic matter allows exothermic reaction during being mixed with a strong alkaline medium, and is selected from one or more of citric acid, ammonium hydrogen citrate, diammonium hydrogen citrate, ethylenediaminetetraacetic acid and azole. The inventive polishing solution can greatly improve polishing rate of TSV and increase yield.

Description

Technical field [0001] The present invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid containing organic acidic substance used for 3D packaging TSV silicon polishing. Background technique [0002] In the integrated circuit (IC) manufacturing process, planarization technology has become one of the indispensable and indispensable technologies that are as important as lithography and etching and are interdependent. The chemical mechanical polishing (CMP) process is currently the most effective and mature planarization technology. The chemical mechanical polishing system is a chemical mechanical planarization technology that integrates cleaning, drying, online inspection, end point detection and other technologies. It is the product of the development of integrated circuits to miniaturization, multilayer, planarization, and thinning. It is an integrated circuit improvement Essential technology for production efficienc...

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Application Information

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IPC IPC(8): C09G1/02H01L21/02
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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