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Preparation method of large-size single-crystal graphene and continuous thin film thereof

A single crystal graphene, continuous thin film technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low mobility of graphene, low theoretical limit of electrical conductivity, etc., and achieve low cost and size. And, the effect of large size

Active Publication Date: 2014-11-05
INST OF METAL RESEARCH - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the mobility of graphene prepared by the current CVD method is generally low, usually between several hundred to several thousand cm 2 / V s, and its conductivity is also far below the theoretical limit

Method used

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  • Preparation method of large-size single-crystal graphene and continuous thin film thereof
  • Preparation method of large-size single-crystal graphene and continuous thin film thereof
  • Preparation method of large-size single-crystal graphene and continuous thin film thereof

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Embodiment 1

[0025] like figure 1 As shown, the present invention adopts horizontal type reaction furnace to grow graphene, and the two ends of horizontal type reaction furnace are respectively provided with gas inlet 1 and gas outlet 4, and metal substrate (this embodiment is platinum) 2 is placed in the high temperature zone of horizontal type reaction furnace, The thermocouple 3 is located in the high temperature zone of the horizontal reactor to monitor the reaction temperature in real time. First, a polycrystalline platinum sheet (thickness 180 μm, length×width=20mm×10mm) was placed in acetone, water and ethanol for ultrasonic cleaning for 40 minutes respectively. After cleaning, put the platinum sheet into a high-temperature furnace and anneal at 1100°C for 10 hours to make a single grain reach the millimeter scale. Then, the platinum sheet after the annealing is placed in the horizontal reaction furnace (the diameter of the furnace tube is 22 millimeters, and the length of the reac...

Embodiment 2

[0028] like figure 1 As shown, the present invention adopts horizontal type reaction furnace to grow graphene, and the two ends of horizontal type reaction furnace are respectively provided with gas inlet 1 and gas outlet 4, and metal substrate (this embodiment is platinum) 2 is placed in the high temperature zone of horizontal type reaction furnace, The thermocouple 3 is located in the high temperature zone of the horizontal reactor to monitor the reaction temperature in real time. First, a polycrystalline platinum sheet (thickness 180 μm, length×width=20mm×10mm) was placed in acetone, water and ethanol for ultrasonic cleaning for 40 minutes respectively. After cleaning, put the platinum sheet into a high-temperature furnace and anneal at 1100°C for 10 hours to make a single grain reach the millimeter scale. Then, the platinum sheet after the annealing is placed in the horizontal reaction furnace (the diameter of the furnace tube is 22 millimeters, and the length of the reac...

Embodiment 3

[0031] like figure 1As shown, the present invention adopts horizontal type reaction furnace to grow graphene, and the two ends of horizontal type reaction furnace are respectively provided with gas inlet 1 and gas outlet 4, and metal substrate (this embodiment is platinum) 2 is placed in the high temperature zone of horizontal type reaction furnace, The thermocouple 3 is located in the high temperature zone of the horizontal reactor to monitor the reaction temperature in real time. First, a polycrystalline platinum sheet (thickness 180 μm, length×width=20mm×10mm) was placed in acetone, water and ethanol for ultrasonic cleaning for 40 minutes respectively. After cleaning, put the platinum sheet into a high-temperature furnace and anneal at 1100°C for 10 hours to make a single grain reach the millimeter scale. Then, the platinum sheet after the annealing is placed in the horizontal reaction furnace (the diameter of the furnace tube is 22 millimeters, and the length of the react...

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Abstract

The invention relates to a preparation technology of graphene, particularly to a preparation method of large-size single-crystal graphene and a continuous thin film thereof, and is suitable for preparing the large-size single-crystal graphene and the continuous thin film. In the preparation method, a chemical vapor deposition technology is adopted, a growth matrix can adopt copper, platinum and other metals, a hydrocarbon is taken as a carbon source; and the preparation method comprises the following steps: firstly performing heat treatment on the metal matrix under the situation that hydrogen-containing carrier gas exists, then performing catalytic cracking on the surface of the metal matrix by utilizing the carbon source gas at high temperature, growing the large-size single-crystal graphene by controlling the concentration of hydrogen and the carbon source and the growth temperature, and preparing the continuous thin film which is spliced by large-size single-crystal graphene crystal grains by prolonging growth time. The high-quality single-crystal graphene above millimeter scale and the large-area continuous thin film spliced by the high-quality single-crystal graphene can be obtained through the preparation method disclosed by the invention, so that a foundation is laid for applications of the graphene in the photoelectric field, including nano-electronic devices, transparent conductive films, display devices, solar cell electrodes, gas sensors, photoelectric converters, thin film electronic devices and the like.

Description

Technical field: [0001] The invention relates to a new graphene material and its chemical vapor deposition (CVD) preparation technology, in particular to a method for preparing large-size single crystal graphene and its continuous film, which is suitable for preparing high-quality single crystal graphene and its continuous film. Background technique: [0002] Graphene is a two-dimensional honeycomb crystal structure formed by densely packing a single layer of carbon atoms, and is the basic structural unit for constructing other dimensional carbon materials (zero-dimensional fullerene, one-dimensional carbon nanotubes, and three-dimensional graphite). The unique crystal structure of graphene makes it have excellent electrical, thermal and mechanical properties, such as its electron mobility as high as 200,000 cm at room temperature 2 / V·s is expected to be widely used in the fields of multifunctional nanoelectronic devices, transparent conductive films, composite materials, c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/18C30B29/02C30B33/06
Inventor 任文才高力波马腾高旸马来鹏成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI