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Method for transferring graphene film to substrate

A graphene film and transfer method technology, which is applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve problems such as unfavorable graphene electronic device preparation, graphene film damage, etc., and achieve complete transfer, easy to achieve, and mechanical properties. Reduced, easy-to-operate effects

Active Publication Date: 2012-07-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The graphene thin film prepared by the present invention is usually attached to the surface of the metal catalyst layer, which is not conducive to the preparation of graphene electronic devices. Before use, the graphene thin film needs to be transferred to a suitable substrate material. If the operation is not careful, the Insufficiency of causing large damage to graphene film, providing a substrate transfer method for graphene film

Method used

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  • Method for transferring graphene film to substrate
  • Method for transferring graphene film to substrate
  • Method for transferring graphene film to substrate

Examples

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Embodiment 1

[0048] Embodiment 1: the graphene film on the metal nickel substrate is transferred to the surface of the silicon dioxide / silicon substrate material.

[0049] figure 2 It is a structural schematic diagram of the substrate transfer process of the graphene film in Example 1 of the present invention. Such as figure 2 As shown, first, a photoresist 9912 is spin-coated on the surface of a graphene film 102 prepared by CVD using nickel 101 as a catalyst, such as image 3 Shown is an optical photo of a graphene film attached to a nickel substrate, spin-coated at 4000 rpm for 1 minute, baked at 115°C for 2 minutes to harden the film; then attach a layer of thermal release tape on the surface of the colloid 103 104, heat release tape is required to completely cover the surface of the organic colloid; then soak it in 0.5mol / L ferric chloride aqueous solution 105, in the solution, hold the corner of the tape with tweezers and gently tear it, the tape will connect the colloid, The gr...

Embodiment 2

[0050] Example 2: Transfer of a thin film of graphene on metallic nickel to a plastic substrate.

[0051] The specific steps are similar to those in Example 1, but the target substrate used is a plastic substrate, and the graphene film can also be successfully transferred to the plastic substrate.

Embodiment 3

[0052] Example 3: Transfer of a graphene film on metallic copper to a silicon dioxide / silicon substrate.

[0053] The specific steps are similar to Example 1, but the metal catalyst layer of CVD growth graphene is copper, and the etching solution is ferric nitrate solution, and the graphene film can also be successfully transferred to the silicon dioxide / silicon substrate.

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Abstract

The invention relates to a method for transferring a graphene film to a substrate, belonging to the field of semiconductor film. The method comprises the following steps: spin-coating an organic colloid on the surface of the graphene film, drying and hardening the film; adhering adhesive tape to the surface of the organic colloid; then putting a substrate material adhered the adhesive tape into a corrosive solution to corrode a metal catalyst layer under the graphene film; after the corrosion is finished, taking out the adhesive tape, the organic colloid and the graphene film which are adhered to the adhesive tape from the solution; uniformly spreading onto a target substrate, removing the adhesive tape by using a corresponding method, then dissolving the organic colloid away to finally finish the transfer of the graphene film to the target substrate. The method for transferring the graphene film to the substrate, disclosed by the invention, is simple and easy to implement, and can conveniently transfer the graphene film with a large area to any substrate material without causing a large damage. The method has the advantages of being large in transfer area, simple in processing steps, convenient in operation and can be combined with semiconductor techniques to prepare graphene semiconductor devices.

Description

technical field [0001] The invention relates to a thin film substrate transfer method, in particular to a graphene thin film substrate transfer method, belonging to the field of semiconductor thin films. Background technique [0002] In 2004, Professor Geim of the University of Manchester prepared Graphene for the first time. Graphene is a hexagonal honeycomb-like two-dimensional structure composed of a single layer of carbon atoms. The intrinsic electron mobility of graphene film can reach 200000cm at room temperature 2 / Vs, and has excellent mechanical and thermal properties. The excellent performance of graphene makes it have huge and potential application properties in the fields of terahertz electronic devices, which makes graphene film of great significance, and it is even predicted that graphene film will eventually replace silicon. [0003] However, the prerequisite for realizing these potential applications is the ability to prepare large-area, low-cost graphene...

Claims

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Application Information

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IPC IPC(8): H01L21/02
Inventor 金智麻芃郭建楠王显泰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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