Depleted body heterojunction quantum dot solar cell and manufacturing method thereof

Abstract

A depleted body heterojunction quantum dot solar cell is formed by successively superposing FTO, TiO2, TiO2, a PbS quantum dot and Au, wherein the FTO is served as a substrate anode; the TiO2 is served as a barrier layer; the TiO2 is served as a n-type layer; the PbS quantum dot is served as a p-type layer and the Au is served as an electrode layer; the TiO2 and the PbS quantum dot form an active layer. The manufacturing method comprises the following steps: successively spinning and coating a barrier layer TiO2 film, an active layer TiO2 film, the PbS quantum dot and a MPA methanol solution on a cleaned and dried substrate; then carrying out vacuum thermal evaporation so as to plate a gold electrode. The invention has the following advantages that: in the active layer of the solar cell, a n-type semiconducting material and the p-type quantum dot are crosswise mixed so as to form a plurality of heterojunctions; the quantum dot is used on the body heterojunction solar cell so that a structure advantage of the body heterojunction structure is used and an unique nature of the quantum dot can be used too, and conversion efficiency of the solar cell can be improved; the manufacturing method of the solar cell has a simple process, is easy to be performed and is beneficial to be popularized and applied in a large scale.

Description

technical field [0001] The invention relates to a solar cell and its preparation, in particular to a depletion type bulk heterojunction quantum dot solar cell and a preparation method thereof. Background technique [0002] Quantum dot materials have many advantages such as low price, wide absorption range and relatively stable. At the same time, it also has unique properties: 1) quantum confinement effect: when quantum dots are applied to solar cells, their absorption wavelength can be changed by controlling the particle size; 2) impact ionization effect: refers to the semiconductor material, when When the energy greater than the energy band is provided by the outside world, the excited electrons will exist in the form of hot electrons. When the hot electrons return from the high-energy excited state to the low-energy excited state, the energy released can move another electron from the valence band. Excited to the conduction band, this is called the impact ionization effec...

AI Technical Summary

Problems solved by technology

[0005] The heterojunction structure includes a double-layer heterojunction structure and a bulk heterojunction structure. The donor and acceptor contact area of ​​the double-layer heterojunction is small, and there is a built-in electric field only at the contact interface between the donor and the acceptor. The photo-excited carriers here have a large mobility, while the mobility of the carriers in the neutral region is very low, the carriers will recombine in the active layer or lose in other forms of energy; if the active If the region becomes thinner, it will affect the absorption of sunlight and affect the efficiency of the battery

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