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Polishing solution used in polishing process with metal ruthenium as adhesive barrier layer in copper interconnection

A metal ruthenium and polishing liquid technology, applied in the field of microelectronics technology, can solve problems such as Cu desorption, achieve the effects of reducing defects, preventing reliability problems, and easy cleaning

Inactive Publication Date: 2012-07-25
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under alkaline conditions, a thick oxide layer will be formed on the surface of Cu, so that the corrosion rate of Cu is lower than that of Ru, so that the polishing rate of Ru is too fast during the polishing process, which may easily cause the dissolution of Ru in the groove. leading to the desorption of Cu

Method used

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  • Polishing solution used in polishing process with metal ruthenium as adhesive barrier layer in copper interconnection
  • Polishing solution used in polishing process with metal ruthenium as adhesive barrier layer in copper interconnection
  • Polishing solution used in polishing process with metal ruthenium as adhesive barrier layer in copper interconnection

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Polishing fluid preparation: 5% SiO by weight 2 Hydrosol, abrasive particle size is 50nm; Accounting for total weight is 0.05% alkylphenol polyoxyethylene ether; Accounting for total weight is 0.23% potassium periodate; Glycine of different weight concentrations and the water of surplus; Nitric acid and potassium hydroxide were used to adjust the pH to 9.0.

[0035] Polishing equipment and mechanical parameter setting: The polishing machine used in this embodiment is the CP-4 desktop polishing machine produced by CETR Company; The rotational speed of the polishing table is 90 rpm.

Embodiment 2

[0044] Polishing fluid preparation: 5% SiO by weight 2 Hydrosol, the abrasive particle size is 50nm; Accounting for the total weight is 0.05% alkylphenol polyoxyethylene ether; Accounting for the total weight is 0.0225% glycine; Different weight concentrations of potassium periodate and the water of the remainder; Nitric acid and potassium hydroxide were used to adjust the pH to 9.0.

[0045] The experimental equipment and parameters are the same as in Example 1.

[0046] Table 2: Polishing rates of Ru and Cu in polishing fluids containing different weight concentrations of potassium periodate

[0047] Potassium periodate (wt%) 0.23 0.69 1.15 Ru polishing rate (nm / min) 18 39 55 Cu polishing rate (nm / min) 27 45 62

[0048] It can be seen from the data in Table 2 that adding a small amount of glycine (less than 0.225wt%) can effectively suppress the polishing rate of Ru and increase the polishing rate of Cu, making the polishing rate of Cu grea...

Embodiment 3

[0050] Polishing liquid preparation: accounting for 0.05% of the total weight of alkylphenol polyoxyethylene ether; accounting for 0.69% of the total weight of potassium periodate; different weight concentrations of glycine and the rest of the water; dilute nitric acid, potassium hydroxide Adjust the pH to 9.0.

[0051] Such as image 3 As shown, the static corrosion rate of Ru decreases gradually with the increase of glycine concentration. After adding 0.075wt% glycine, the static corrosion rate of Ru decreased to 6nm / min, indicating that glycine can well inhibit the corrosion of Ru.

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Abstract

The invention belongs to the technical field of microelectronic processes, particularly discloses a polishing solution used in a polishing process with metal ruthenium as an adhesive barrier layer in copper interconnection. The polishing solution comprises the following component raw materials by weight: 0.001 to 10 percent of an inhibitor, 0.1 to 10 percent of an oxidant, 1 to 25 percent of grinding particles, 0.001 to 5 percent of a surfactant, and the balance of water. After the raw materials are mixed, the pH value is regulated to 8.5 to 9.5 through a pH regulator; the inhibitor is selected from organic acid with one or more amino groups and carboxyl groups at the same time, and the oxidant is selected from hydrogen peroxide, ammonium persulphate, potassium periodate, potassium bromate, perborate ammonium ceric nitrate and the like; and the grinding particles are selected from SiO2 hydrosol or hydrosol of metal oxide Al2O3, CeO2 or TiO2 and the like. The polishing solution disclosed by the invention shows weak alkaline, does not corrode and contaminate equipment, is easy to clean, and can polish ruthenium (Ru) and cuprum (Cu) at a polishing selection ratio of 1:1, and the smoothness is good after polishing.

Description

technical field [0001] The invention belongs to the technical field of microelectronic technology, and in particular relates to a polishing liquid used in a microelectronic polishing technology. Background technique [0002] With the development of ultra-large-scale integrated circuit (ULSI) technology to smaller device sizes, in order to reduce the IC delay of the interconnection, it is required to increase the conductance of the interconnection line, so the seedless copper interconnection technology is adopted, that is, Cu is directly plated on the bonded Attached to the barrier layer, more and more attention has been paid. The tantalum (Ta) currently in use has relatively high resistivity (Ta resistivity 14 μ? cm), and cannot be used as a seed layer for direct copper plating, so the traditional Cu adhesion layer / barrier layer (Ta) / TaN can no longer meet the increasingly shrinking requirements of devices. Compared with Ta, ruthenium (Ru) has lower resistivity (Ru resist...

Claims

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Application Information

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IPC IPC(8): C09G1/02
Inventor 曾旭屈新萍
Owner FUDAN UNIV
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