Femtosecond laser film micro-nanomachining real-time monitoring device
A technology of micro-nano processing and femtosecond laser, which is applied in the field of micro-processing devices of spectroscopic technology, can solve problems that affect the efficiency and continuity of processing, and cannot meet the needs of precision and miniaturization, so as to improve detection efficiency and reliability. Sexuality, saving processing efficiency, and wide application range
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[0018] Example 1, reference figure 1 , A femtosecond laser thin film micro-nano processing device, which includes a laser generating system, an external optical path system, a PC 15 and a three-dimensional mobile platform 11; the laser generating system consists of a pump source 1, a femtosecond laser 2, and The regenerative amplifier 3 is composed; the external optical path system is composed of a total mirror 4, a shutter 5, an attenuation mirror 7, a half mirror 8 and a focusing mirror 9; the laser light emitted by the laser generation system is focused on the external optical path system Focusing mirror 9; It is characterized in that: the device is also provided with a spectral focusing mirror 10, an optical fiber probe 12, a spectrometer 13, an enhanced CCD 14 and a time delay controller 16; the spectral focusing mirror 10 and the optical fiber probe 12 are fixed in three dimensions On the mobile platform 11, the spectrometer 13 is connected to the optical fiber probe 12 th...
Example Embodiment
[0019] In the second embodiment, the femtosecond laser thin film micro-nano processing device described in the first embodiment: an energy meter 6 is provided on the reflection direction side of the half mirror 8.
Example Embodiment
[0020] In Example 3, in the femtosecond laser thin-film micro-nano processing device described in Example 1 or 2, the response band of the spectrometer is 200 nm to 980 nm, and the resolution is 0.1 nm.
[0021] Using the femtosecond laser thin film micro-nano processing device of this embodiment, an experiment of processing thin film samples was performed. Before processing monitoring, first open the shutter 5, adjust the attenuation mirror 7, detect the pulse energy through the energy meter 6, and manually adjust the position of the focusing mirror 9 to focus the beam on the sample surface placed on the three-dimensional moving platform 11. Adjust the distance and angle between the spectral focusing mirror 10 and the optical fiber probe 12 and the sample. When the spectrometer 13, enhanced CCD 14, time delay controller (DG535) 16 and PC 15 can obtain the strongest plasma line, Fix the spectral focusing mirror 10 and the optical fiber probe 12 on the surface of the three-dimensi...
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