Methane gas sensor on basis of organic thin film transistor and preparation method of methane gas sensor

A technology of thin-film transistors and methane gas, which is applied in instruments, scientific instruments, measuring devices, etc., can solve the problems of easy interference of response signals, poor stability of measured values, high cost consumption, etc., and achieve simplified device preparation process, large response current, The effect of good electrical characteristics

Inactive Publication Date: 2012-08-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF8 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, both the optical interference detection method and the catalytic combustion method have the disadvantages of high cost consumption to varying degrees; the optical interference method cannot perform continuous measurement, and the gas concentration indication is not intuitive; although the catalytic combustion method has high response sensitivity and good selectivity to gases , but the measured value has poor stability and low precision, and its response signal is easily disturbed, and there are zero drift and output sensitivity changes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methane gas sensor on basis of organic thin film transistor and preparation method of methane gas sensor
  • Methane gas sensor on basis of organic thin film transistor and preparation method of methane gas sensor
  • Methane gas sensor on basis of organic thin film transistor and preparation method of methane gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The organic thin film transistor gas sensor is composed of a glass substrate, a gate electrode, a gate insulating layer, a drain electrode, a source electrode, and an organic layer. On top of the electrode insulating layer, an organic layer connects the source electrode and the drain electrode. The organic layer is made of p-type organic semiconductor material pentacene.

[0041]Clean the glass substrate on which the gate electrode ITO has been sputtered. Firstly, after scrubbing with a cleaning agent, the cleaning agent solution is ultrasonicated for 10 minutes, then the substrate is scrubbed with a detergent, rinsed with deionized water, and the deionized aqueous solution is ultrasonicated for 10 minutes. Sonicate in acetone solution for 10 minutes, and finally in ethanol solution for 10 minutes. After cleaning, dry the substrate with nitrogen; set the front rotation to 500 rpm and the back rotation to 1000 rpm to spin coat the insulating layer PMMA with a thic...

Embodiment 2

[0044] Clean the glass substrate on which the gate electrode ITO has been sputtered. Firstly, after scrubbing with a cleaning agent, the cleaning agent solution is ultrasonicated for 10 minutes, then the substrate is scrubbed with a detergent, rinsed with deionized water, and the deionized aqueous solution is ultrasonicated for 10 minutes. Sonicate in acetone solution for 10 minutes, and finally in ethanol solution for 10 minutes. After cleaning, dry the substrate with nitrogen; set the front rotation to 500 rpm and the back rotation to 1000 rpm to spin-coat the insulating layer PS with a thickness of 20 nanometers; then anneal at 150°C for 1 hour; Then use the vacuum evaporation method to evaporate the source electrode and the drain electrode. The source and drain electrodes are both Au electrodes. -0.02 nanometers / second, the thickness reaches 25 nanometers; the gas sensor is obtained.

Embodiment 3

[0046] Clean the glass substrate on which the gate electrode ITO has been sputtered. First, after scrubbing with a cleaning agent, the cleaning agent solution is ultrasonicated for 15 minutes, then the substrate is scrubbed with a detergent, rinsed with deionized water, and the deionized aqueous solution is ultrasonicated for 15 minutes. Sonicate in acetone solution for 15 minutes, and finally in ethanol solution for 15 minutes. After cleaning, dry the substrate with nitrogen; set the front rotation to 500 rpm and the back rotation to 1000 rpm to spin-coat the insulating layer of PVA with a thickness of 2000 nanometers; then anneal at 150 ° C for 1 hour; Then use the vacuum evaporation method to evaporate the source electrode and the drain electrode. The source and drain electrodes are both Au electrodes. -0.02 nanometers / second, the thickness reaches 25 nanometers; the gas sensor is obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a methane gas sensor on the basis of an organic thin film transistor and a preparation method of the methane gas sensor, and belongs to the field of application of gas sensors. A novel methane gas detection method is characterized by low cost and simple preparation process. The methane gas sensor adopts a bottom gate bottom contact structure of the organic thin film transistor and comprises a substrate, gate electrodes positioned on the substrate, an insulating layer positioned on the gate electrodes, and source electrodes and drain electrodes positioned on the gate-electrode insulting layer, wherein an organic layer with a gas detection function is arranged above the source and drain electrodes. The methane gas sensor is used for detecting methane in the environment.

Description

technical field [0001] The invention belongs to the technical field of gas sensors, and in particular relates to a methane gas sensor based on an organic thin film transistor and a preparation method thereof. Background technique [0002] Methane is widely distributed in nature and is one of the main components of natural gas, biogas, pit gas and coal gas. Accidents caused by methane gas explosions have caused great harm in the mining industry. As one of the main threats to coal mine safety, methane explosion has caused huge economic losses and sacrifices of workers. Methane is basically non-toxic to humans and is slightly toxic. Skin contact with liquefied methane can cause frostbite. However, when the concentration is too high, the oxygen content in the air will be significantly reduced, causing people to suffocate. When methane in the air reaches 25%-30%, it can cause headache, dizziness, fatigue, lack of concentration, rapid breathing and heartbeat, etc. If not kept ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N27/60
Inventor 钟建于军胜张霖于欣格
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap