Bonding paste and method for bonding semiconductor element and substrate
A bonding method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of increased flux residues, changes in thermistor resistance values, etc. The effect of coating
Active Publication Date: 2015-09-02
MITSUBISHI MATERIALS CORP
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Problems solved by technology
In addition, flux residues increase, which also poses a problem requiring a more careful cleaning process
Also, when Au20Sn solder paste is used for joining the thermistor to the substrate, there is also a problem that the resistance value of the thermistor changes.
Method used
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[0062] Hereinafter, the present invention will be explained in detail through examples, but the present invention is not limited to these examples.
[0063] The silver nanoparticles are manufactured as follows. First, silver nitrate is dissolved in deionized water to prepare a metal salt aqueous solution. On the other hand, sodium citrate was dissolved in deionized water to prepare an aqueous solution of sodium citrate with a concentration of 20%. In this sodium citrate aqueous solution, granular ferrous sulfate was directly added and dissolved in a stream of nitrogen to prepare an aqueous reducing agent solution containing citric acid ions and ferrous ions in a molar ratio of 3:2. Next, while stirring the reducing agent aqueous solution in a nitrogen stream, the metal salt aqueous solution was dropped to the reducing agent aqueous solution and mixed. Here, the concentration of each solution was adjusted so that the amount of the metal salt aqueous solution added was 5% of the ...
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Abstract
The invention provides a paste for jointing and a method for jointing a semiconductor device and a substrate. The paste has metal nanoparticles (A) with a mean grain size of being less than 100nm, a solvent (B) with a boiling point between 50 to 100 DEG and a solvent (C) with a boiling point between 150 to 200DEG, wherein corresponding to the gross 100 phr of the (B) component and the (C) component, the content of the (B) component is 10 to 30 phr. The method for jointing a semiconductor device and a substrate is characterized in that the paste for jointing is coated on the substrate for drying the paste; and the semiconductor element is arranged on the paste after drying for heating process.
Description
Technical field [0001] The present invention relates to a bonding paste and a method of bonding a semiconductor element and a substrate using the bonding paste. The present invention is particularly suitable for joining semiconductor elements such as LED elements that are not expected to be heated for a long time. Background technique [0002] In recent years, in order to increase the brightness of the LED, the output power required by the LED has increased. As a countermeasure for the heat generation associated with the increase in the output of the LED, the solder paste of Au-Sn eutectic alloy containing 20% by mass of Sn (hereinafter referred to as "Au20Sn") is usually used for the bonding of the LED element and the substrate. Metal diffusion bonding (Patent Document 1, Patent Document 2). Au20Sn has a high melting point of about 280°C. In addition, Au20Sn solder paste is used for the bonding of semiconductors and substrates for thermistors, thermoelectric elements, or Pe...
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IPC IPC(8): B23K35/22B23K35/30B23K1/00H01L23/492H01L33/62H01L33/00
CPCH01L2224/83192H01L2924/01322H01L2224/8384H01L2224/32225H01L24/29H01L24/32H01L24/83H01L2224/27848H01L2224/32013H01L2224/29006H01L2924/00H05K3/34B23K31/02H01L21/52
Inventor 林芳昌马渡芙弓松浦大志山崎和彦
Owner MITSUBISHI MATERIALS CORP