Pre-cleaning agent used before napping monocrystalline silicon piece and application method

A single crystal silicon wafer and cleaning agent technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve problems such as hydrogen peroxide is easy to decompose, endanger human body safety, contain phosphorus substances, etc., and achieve configuration and use process Simple, no burning and explosion hazard, no harm to human body and environment

Inactive Publication Date: 2012-08-22
ZHEJIANG TOPOINT PHOTOVOLTAIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Particles, metal contamination, organic contamination, and natural oxide film on the surface of the silicon wafer will seriously affect the efficiency and yield of the cell
The main problem with cleaning solutions currently on the market is that they contain phosphorus substances, such as sodium tripolyphosphate, sodium phosphate, etc.
If these substances are discharged into the environment, it will lead to eutrophication of water quality, which is not conducive to the development of environmental protection work.
If the traditional RCA cleaning solution or hydrogen peroxide cleaning system is used, the

Method used

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  • Pre-cleaning agent used before napping monocrystalline silicon piece and application method
  • Pre-cleaning agent used before napping monocrystalline silicon piece and application method
  • Pre-cleaning agent used before napping monocrystalline silicon piece and application method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Take the following process steps: 1) prepare alkaline solution: use 40ml deionized water as solvent, dissolve 0.4g sodium hydroxide and 0.3g sodium silicate in deionized water; 2) use 40ml deionized water as solvent, dissolve 0.6 1g sodium citrate, 1g sodium p-toluenesulfonate and 1.6g octylphenol polyoxyethylene ether are dissolved in deionized water; 3) Diethylene glycol dimethyl ether of alkaline solution, 3ml and remaining 17ml deionized water Slowly add to the solution in step 2) to prepare 100ml of pre-cleaning agent; 4) Add 100ml of pre-cleaning agent to the deionized water tank, dilute it according to the volume ratio of 1:50, and then immerse the monocrystalline silicon in the diluted cleaning solution Cleaning is carried out at a temperature of 55°C and a cleaning time of 250s. Texture the cleaned solar silicon wafers according to the common texturing process in the photovoltaic industry to obtain textured silicon wafers, and compare the textured effect.

[0...

Embodiment 2

[0021] Take the following process steps: 1) prepare alkaline solution: use 40ml deionized water as solvent, dissolve 0.5g sodium hydroxide and 0.4g sodium silicate in deionized water; 2) use 40ml deionized water as solvent, dissolve 0.7 g sodium citrate, 1.1g sodium p-toluenesulfonate, 1g octylphenol polyoxyethylene ether and 0.5g nonylphenol polyoxyethylene ether are dissolved in deionized water; 3) alkaline solution, 4ml diethylene glycol Dimethyl ether and the remaining 16ml of deionized water are slowly added to step 2) in the solution to prepare 100ml of pre-cleaning agent; 4) 100ml of pre-cleaning agent is added in the deionized water tank, diluted at 1:50 according to the volume ratio, and then The single crystal silicon is immersed in the diluted cleaning solution for cleaning, the temperature is 50°C, and the cleaning time is 300s.

Embodiment 3

[0023] Take the following process steps: 1) prepare alkaline solution: use 40ml deionized water as solvent, dissolve 0.4g sodium hydroxide and 0.3g sodium carbonate in deionized water; 2) use 40ml deionized water as solvent, dissolve 0.8g Sodium citrate, 1.2g sodium p-toluenesulfonate and 1.8g octylphenol polyoxyethylene ether are dissolved in deionized water; 3) Diethylene glycol dimethyl ether of alkaline solution, 5ml and remaining 15ml deionized water Slowly add to the solution in step 2) to prepare 100ml of pre-cleaning agent; 4) Add 100ml of pre-cleaning agent to the deionized water tank, dilute it according to the volume ratio of 1:50, and then immerse the monocrystalline silicon in the diluted cleaning solution Cleaning is carried out at a temperature of 60°C and a cleaning time of 180s.

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Abstract

The invention relates to a pre-cleaning agent used before napping a monocrystalline silicon piece and an application method. The existing main problem is that cleaning fluids in the market at present contain phosphorus substances, and the eutrophication of water quality can be caused if the phosphorus substances are discharged to the environment, and the phosphorus substances are not favorable of the development of efforts at environmental protection. The pre-cleaning agent is characterized by comprising the following components: alkylphenol ethoxylates, inorganic base and salt of the inorganic base, sodium citrate, paratoluenesulfonic acid sodium salt, cosolvent and the balance of water, wherein the deionized water is used as the water preferably. The pre-cleaning agent used before napping the monocrystalline silicon piece has the advantages that the occurrence probability of contaminations, such as fingerprints and spots on the surface of the silicon piece, can be reduced, a napping effect is obviously enhanced, the yield of the silicon piece is further increased, and the production efficiency of enterprises is increased. Moreover, a catalyst used by the pre-cleaning agent is nontoxic, non-corrosive and non-irritant, has no burning and explosion hazards and is not harmful to human bodies and the environment. Moreover, the catalyst is simple in preparation and application process, equipment is cheap and the repeatability is high.

Description

technical field [0001] The invention relates to a pre-cleaning agent for monocrystalline silicon wafers before texturing and a using method thereof. Background technique [0002] Silicon wafer cleaning is an important process in the preparation of solar cells, because impurities on the surface will seriously affect the performance and yield of solar cells. Particles, metal contamination, organic contamination, and natural oxide film on the surface of the silicon wafer will seriously affect the efficiency and yield of the cell. The main problem with the cleaning solutions currently on the market is that they contain phosphorus substances, such as sodium tripolyphosphate and sodium phosphate. If these substances are discharged into the environment, it will lead to eutrophication of water quality, which is not conducive to the development of environmental protection work. If the traditional RCA cleaning solution or hydrogen peroxide cleaning system is used, there are also man...

Claims

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Application Information

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IPC IPC(8): C23G1/14C30B33/08
Inventor 吴秋轩
Owner ZHEJIANG TOPOINT PHOTOVOLTAIC
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