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Method for preparing anodic aluminum oxide (AAO) template with large pore diameter and thin wall on silicon substrate

An anodized aluminum, anodized technology, applied in the direction of anodic oxidation, ion implantation plating, coating, etc., can solve the problems of uneven distribution, small wall thickness, etc.

Inactive Publication Date: 2012-08-22
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to propose a method for preparing a large-aperture thin-wall anodized aluminum template on a silicon substrate in order to overcome the shortcomings of small wall thickness and uneven distribution of the holes of the anodized aluminum template prepared on the silicon substrate

Method used

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  • Method for preparing anodic aluminum oxide (AAO) template with large pore diameter and thin wall on silicon substrate
  • Method for preparing anodic aluminum oxide (AAO) template with large pore diameter and thin wall on silicon substrate
  • Method for preparing anodic aluminum oxide (AAO) template with large pore diameter and thin wall on silicon substrate

Examples

Experimental program
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Embodiment 1

[0019] Carry out standard RCA cleaning to the silicon substrate, and then use vacuum thermal evaporation to deposit an aluminum layer with a thickness of 1000 nanometers on the surface of the silicon substrate; put the silicon substrate deposited with the aluminum layer into an anodic oxidation tank, and The anodizing tank is placed in a mixture of ice and water, and a magnetic stirrer is used to stir the anodizing solution to control the temperature at 0-5°C. The anodizing solution is an ethylene glycol solution of phosphoric acid, and the volume percentage of phosphoric acid is 18%. , anodized at a voltage of 210V for 5 minutes; then the sample was taken out, washed repeatedly with deionized water, and placed in 5 wt% phosphoric acid aqueous solution at room temperature to expand the pores for 20 minutes. Thus, a large-aperture thin-wall anodized aluminum template on a silicon substrate is obtained. figure 1 It is a scanning electron microscope (SEM) photo of the large-apert...

Embodiment 2

[0021] Carry out standard RCA cleaning to the silicon substrate, and then use vacuum thermal evaporation to deposit an aluminum layer with a thickness of 750 nanometers on the surface of the silicon substrate; the silicon substrate deposited with the aluminum layer is placed in an anodic oxidation tank, and the The anodizing tank is placed in a mixture of ice and water, and a magnetic stirrer is used to stir the anodizing solution to control the temperature at 0-5°C. The anodizing solution is an ethylene glycol solution of phosphoric acid, and the volume percentage of phosphoric acid is 24%. , anodized at a voltage of 250V for 1 minute; the sample was taken out, washed repeatedly with deionized water, and placed in 5 wt% phosphoric acid aqueous solution at room temperature to expand the pores for 30 minutes. Thus, a large-aperture thin-wall anodized aluminum template on a silicon substrate is obtained. figure 2 It is a scanning electron microscope (SEM) photo of the large-ape...

Embodiment 3

[0023] Use a concentrated strong alkaline hot solution to remove the damaged layer on the surface of the silicon substrate to make the surface smooth, then perform standard RCA cleaning on the silicon substrate, and then use vacuum thermal evaporation to deposit an aluminum layer with a thickness of 500 nanometers on the surface; Put the silicon substrate deposited with the aluminum layer into the anodizing tank, put the anodizing tank in the mixture of ice and water, and use a magnetic stirrer to stir the anodizing solution so as to control the temperature at 0-5°C, anodizing The solution is an ethylene glycol solution of phosphoric acid, wherein the volume percentage of phosphoric acid is 21%, anodized at a voltage of 230V for 2 minutes; the sample is taken out and cleaned repeatedly with deionized water, and placed in 5wt% phosphoric acid at room temperature Pore ​​expansion in aqueous solution for 50 minutes. Thus, a large-aperture thin-wall anodized aluminum template on a...

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Abstract

Disclosed is a method for preparing an AAO template with a large pore diameter and a thin wall on a silicon substrate. The steps include washing the silicon substrate; depositing an aluminum layer with the thickness of 500 to 1000 nanometers on the surface of the washed silicon substrate; anodizing the aluminum layer deposited on the silicon substrate, wherein an anodizing groove is arranged in ice and water mixtures, temperature during the anodizing process is controlled with stirring in a range of 0 DEG C to 5 DEG C, anodizing solutions are phosphoric acid ethylene glycol solutions, the phosphoric acid accounts for 18% to 24% of the ethylene glycol solutions, the anodizing voltage is 210 V to 250 V, and the anodizing time is 1 minute to 5 minutes; and cleaning the prepared AAO template with deionized water, placing the AAO template in 5 wt% phosphoric acid water solution at the room temperature to expand holes for 20 to 50 minutes, and removing oxide blocking layers at the bottom of the holes simultaneously. Accordingly, the AAO template with the large pore diameter and the thin wall is obtained on the silicon substrate, the pore diameter is larger than 100 nanometers, and the thickness of pore wall is smaller than the semi-diameter of the pore.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for preparing a large-aperture thin-wall anodized aluminum template on a silicon substrate. Background technique [0002] Anodic oxidation of aluminum and its alloys in sulfuric acid, oxalic acid, phosphoric acid and other electrolytes can form an aluminum oxide film with a porous structure on the surface, and filling different substances in its micropores can obtain various surface composite materials to improve The surface properties of aluminum and aluminum alloy materials can also be used as templates for the preparation of one-dimensional nanomaterials or nanoarrays, that is, anodized aluminum oxide (AAO) templates. At present, the electrolytes used in anodic oxidation at home and abroad are mainly sulfuric acid solution and oxalic acid solution, and the prepared AAO template has a small pore size, only a few nanometers to tens of nanometers. AAO templates with larger...

Claims

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Application Information

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IPC IPC(8): C25D11/04C23C14/16C23C14/24B82Y40/00
Inventor 李兆辰赵雷王文静
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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