Device for largely and continuously preparing two-dimensional nanometer films in large

A two-dimensional nano-film technology, which is applied in the field of preparation devices for new materials, can solve the problems of poor electronic transmission performance of thin films, restricting the application of two-dimensional nano-films, and being unsuitable for large-scale continuous preparation.

Active Publication Date: 2012-08-29
徐明生
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, there are many structural defects in the two-dimensional nano-film synthesized by the quartz tube furnace, which leads to poor electron transport performance of the prepared film. The quartz tube fur

Method used

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  • Device for largely and continuously preparing two-dimensional nanometer films in large
  • Device for largely and continuously preparing two-dimensional nanometer films in large
  • Device for largely and continuously preparing two-dimensional nanometer films in large

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] see figure 1 , the device for large-scale continuous preparation of two-dimensional nano-films of the present invention is provided with a feeding chamber 1, a processing chamber 2, a first balance chamber 3, a first film preparation chamber 4, a second balance chamber 5, The second film preparation chamber 6, the third balance chamber 7, the chemical vapor deposition chamber 8 and the discharge chamber 9; A valve 11 is provided between the chambers 2, a valve 12 is provided between the processing chamber 2 and the first balance chamber 3, a valve 13 is provided between the first balance chamber 3 and the first film preparation chamber 4, and the first A valve 14 is provided between the film preparation chamber 4 and the second balance chamber 5, a valve 15 is provided between the second balance chamber 5 and the second film preparation chamber 6, and the second film preparation chamber 6 and the third film preparation chamber A valve 16 is provided between the balance...

Embodiment 2

[0073] see figure 2 , the device for large-scale continuous preparation of two-dimensional nano-films of the present invention is provided with a feeding chamber 1, a processing chamber 2, a first balance chamber 3, a first film preparation chamber 4, a second balance chamber 5, The second film preparation chamber 6, the third balance chamber 7, the chemical vapor deposition chamber 8 and the discharge chamber 9; A valve 11 is provided between the chambers 2, a valve 12 is provided between the processing chamber 2 and the first balance chamber 3, a valve 13 is provided between the first balance chamber 3 and the first film preparation chamber 4, and the first A valve 14 is provided between the film preparation chamber 4 and the second balance chamber 5, a valve 15 is provided between the second balance chamber 5 and the second film preparation chamber 6, and the second film preparation chamber 6 and the third film preparation chamber A valve 16 is provided between the balanc...

Embodiment 3

[0090] see image 3 , the device for large-scale continuous preparation of two-dimensional nano-films of the present invention is provided with a feeding chamber 1, a processing chamber 2, a first balance chamber 3, a first film preparation chamber 4, a second balance chamber 5, The second film preparation chamber 6, the third balance chamber 7, the chemical vapor deposition chamber 8 and the discharge chamber 9; A valve 11 is provided between the chambers 2, a valve 12 is provided between the processing chamber 2 and the first balance chamber 3, a valve 13 is provided between the first balance chamber 3 and the first film preparation chamber 4, and the first A valve 14 is provided between the film preparation chamber 4 and the second balance chamber 5, a valve 15 is provided between the second balance chamber 5 and the second film preparation chamber 6, and the second film preparation chamber 6 and the third film preparation chamber A valve 16 is provided between the balance...

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PUM

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Abstract

The invention discloses a device for largely and continuously preparing two-dimensional nanometer films. The device comprises a feeding cavity chamber, a processing cavity chamber, a first balance cavity chamber, a first film preparation cavity chamber, a second balance cavity chamber, a second film preparation cavity chamber, a third balance cavity chamber, a chemical vapor deposition cavity chamber and a discharging cavity chamber, wherein valves are arranged among the cavity chambers and samples are continuously conveyed among the cavity chambers through a conveying device; the film preparation cavity chamber is provided with a physical vapor deposition system; and the chemical vapor deposition system is provided with a heating device and a gas connecting hole. The complete set of device is provided with an automatic control system for controlling opening or closing of the valves among the cavity chambers, conveying of the samples, gas flow, vacuuming operation and the like. Due tothe device, the two-dimensional nanometer films of graphene, metal sulfur-group compounds, silylene, germylene or boron nitride or the like can be largely and continuously prepared. The device has the characteristic of continuously forming films, can preprocess substrates/catalysts for largely and continuously preparing the two-dimensional nanometer films as well as samples and the like in different cavity chambers, and is suitable for the industrial preparation of the two-dimensional nanometer films.

Description

technical field [0001] The invention relates to a device for preparing new materials, in particular to a device for large-scale and continuous preparation of novel two-dimensional nanomaterials such as graphene, metal chalcogenides, silicene, germanene, and boron nitride. Background technique [0002] Graphene has excellent two-dimensional electrical, optical, thermal, mechanical properties and chemical stability. Graphene has broad application prospects in ultrafast optoelectronic devices, clean energy, sensors, etc. The transmission speed of electrons in graphene is 150 times that of silicon. Famous companies such as IBM have prepared ultra-fast optoelectronic devices with speeds up to terahertz. The University of California in the United States has developed an optical modem using graphene, which is expected to increase the network speed by 10,000 times; The global annual demand for semiconductor crystal silicon is about 2,500 tons. If graphene replaces one-tenth of cryst...

Claims

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Application Information

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IPC IPC(8): C23C16/54C23C14/56C23C28/00
Inventor 徐明生
Owner 徐明生
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