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Method for preparing Ni film annealed graphene nanobelt by injecting silicon into 3C-SiC

A graphene nanoribbon and 3c-sic technology, applied in the field of microelectronics, can solve the problems of many pores, expensive single crystal SiC, affecting device performance, etc., achieve high quality, cheap growth cost, and ensure device performance.

Inactive Publication Date: 2012-09-05
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermal decomposition temperature of SiC is relatively high, and single crystal SiC is very expensive, and the grown graphene is distributed in an island shape with many pores. Reduced electron mobility in graphene affects device performance

Method used

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  • Method for preparing Ni film annealed graphene nanobelt by injecting silicon into 3C-SiC
  • Method for preparing Ni film annealed graphene nanobelt by injecting silicon into 3C-SiC

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Step 1: Remove sample surface contamination.

[0025] Clean the surface of the 4-inch Si substrate substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0026] Step 2: Put the Si substrate substrate into the reaction chamber of the CVD system, and evacuate the reaction chamber to 10 -7 mbar level.

[0027] Step 3: growing the carbonized layer.

[0028] In the case of H2 protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1000 ° C, and then the flow rate of 30ml / min is introduced into the reaction chamber. 3 h 8 , grow a layer of carbonized layer on the Si substrate, the growth time is 8min.

[0029] Step 4: growing a 3C-SiC film on the carbide layer.

[0030] Rapidly raise the t...

Embodiment 2

[0041] Step 1: Remove sample surface pollutants.

[0042] Clean the surface of the 8-inch Si substrate substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0043] Step 2: Same as Step 2 of Example 1.

[0044] Step 3: growing a carbonized layer.

[0045] In the case of H2 protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1100 ° C, and then the flow rate of 30ml / min is introduced into the reaction chamber. 3 h 8 , grow a layer of carbonized layer on the Si substrate, the growth time is 6min.

[0046] Step 4: growing a 3C-SiC epitaxial film on the carbonized layer.

[0047] Rapidly raise the temperature of the reaction chamber to the growth temperature of 1300°C, and feed the SiH at the f...

Embodiment 3

[0056] Step A: Clean the surface of the 12-inch Si substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0057] Step B: Same as Step 2 of Example 1.

[0058] Step C: In H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1150 ° C, and then the flow rate of 30ml / min is introduced into the reaction chamber. 3 h 8 , for 3 min to grow a carbonized layer on the Si substrate.

[0059] Step D: Rapidly raise the temperature of the reaction chamber to the growth temperature of 1300°C, and feed the SiH with flow rates of 25ml / min and 50ml / min respectively. 4 and C 3 h 8 , carry out 3C-SiC film heteroepitaxial growth for 36min; then in H 2 Gradually cool down to room temperatu...

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Abstract

The invention discloses a method for preparing a Ni film annealed graphene nanobelt by injecting silicon into 3C-SiC, and mainly solves the problems that the surface of graphene prepared in the prior art is unsmooth and low in continuity, and the electron migration rate of the graphene is reduced because of a photoetching process during manufacturing of a device. The method comprises the following steps of: growing a carbonization layer serving as a transition layer on a Si substrate; hetero-epitaxially growing 3C-SiC at the temperature of between 1,200 and 1,350 DEG C; selecting an injectionregion on the 3C-SiC sample, and injecting Si ions; placing the 3C-SiC sample into an epitaxial furnace, heating to the temperature of between 1,200 and 1,300 DEG C, keeping the temperature for 30 to90 minutes, and generating a carbon film through pyrolyzation of 3C-SiC in the injection region; depositing a Ni film with the thickness of between 300 to 500 nanometers by electron beams on a Si matrix; and placing the generated carbon film sample on the Ni film, putting the carbon film and the Cu film into argon, annealing at the temperature of between 900 and 1,200 DEG C for 10 to 20 minutes, and thus obtaining the graphene nanobelt. The method is low in cost and high in safety; the pyrolyzation temperature of the 3C-SiC in the injection region is reduced; the surface of the obtained graphene nanobelt is smooth and high in continuity; and the graphene nanobelt can be used for manufacturing microelectronic devices.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor thin film material and a preparation method thereof, in particular to a preparation method of Ni film annealing graphene nanobelts injected with Si into 3C-SiC. Background technique [0002] Graphene appeared in the laboratory in 2004. At that time, two scientists, Andre Gem and Kostya Novoselov, from the University of Manchester in the United Kingdom discovered that they could obtain more and more graphene in a very simple way. thinner and thinner graphite flakes. They peeled off the graphite flakes from the graphite, then glued the two sides of the flakes to a special adhesive tape, and when the tape was torn off, the graphite flakes could be split in two. Repeatedly doing this, the flakes got thinner and thinner, and eventually, they got a flake made of just one layer of carbon atoms, which is graphene. Graphene, as a half-metal material with zero band...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04B82Y40/00C01B32/184
Inventor 郭辉张克基张玉明张凤祁赵艳黎雷天民
Owner XIDIAN UNIV