Method for preparing grapheme nanobelt by injecting Si to SiC based on Cu membrane annealing
A graphene nanoribbon and annealing technology, applied in the field of microelectronics, can solve the problems of graphene electron mobility reduction, affecting device performance, and many pores, and achieve the effects of high safety, good continuity, and simple process
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Embodiment 1
[0018] Step 1: Wash the 6H-SiC sample to remove surface contamination.
[0019] (1.1) Use NH for 6H-SiC substrate 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;
[0020] (1.2) Use HCl+H on the 6H-SiC sample after removing the surface organic residues 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.
[0021] Step 2: Perform Si ion implantation on the designated area of the 6H-SiC sample.
[0022] On the cleaned 6H-SiC sample, select an area with the same shape as the substrate of the device to be fabricated as the implantation area, and then implant the energy in this implantation area at 15keV, and the dose is 5×10 14 cm -2 of Si ions.
[0023] Step 3: 6H-SiC is pyrolyzed to form a carbon film.
[0024] Put the 6H-SiC sample after implanting Si ions into the pressure of 0.5×10 -6 In the epitaxy furnace of Torr, t...
Embodiment 2
[0030] Step 1: Clean the 4H-SiC sample to remove surface pollutants.
[0031] For 4H-SiC substrates, use NH first 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.
[0032] Step 2: Perform Si ion implantation on the designated area of the 4H-SiC sample.
[0033] On the cleaned 4H-SiC sample, select an area with the same shape as the substrate of the device to be fabricated as the implantation area, and then implant the energy in this implantation area at 25keV, and the dose is 5×10 15 cm -2 Si ions;
[0034] Step 3: 4H-SiC is pyrolyzed to form a carbon film.
[0035] Put the 4H-SiC sample implanted with Si ions into the epitaxial furnace, and the pressure in the epitaxial furnace is 0.8×10 -6 Torr, and flow Ar gas with a gas flow rate of 600ml / min into i...
Embodiment 3
[0039] Step A: Clean the surface of the 6H-SiC substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.
[0040] Step B: On the cleaned 6H-SiC sample, select an area with the same shape as the substrate of the device to be fabricated as the implantation area, and then implant the energy into this implantation area with 30keV and a dose of 5×10 17 cm -2 of Si ions.
[0041] Step C: Put the 6H-SiC sample implanted with Si ions into the epitaxial furnace, and the pressure in the epitaxial furnace is 1×10 -6 Torr, and pass Ar gas with a flow rate of 800ml / min into it, then heat to 1300°C, and keep the constant temperature for 30min, so that the 6H-SiC in the injection area is pyrolyzed to form a carbon film.
[0042] Step D: Take out the gene...
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