Positive photosensitive resin composition, cured film formed from the same, and device having cured film

A technology of photosensitive composition and photosensitive resin, which is applied in the field of planarizing film for solid-state imaging element, interlayer insulating film for parts, and pattern of microlens array, which can solve the problems of low transparency and complexity, and achieve high chemical resistance. Excellent effect

Active Publication Date: 2012-09-12
TORAY IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this material, the process of incorporating phenol into the polymer structure is added, which is complicated and has the problem of low transparency.

Method used

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  • Positive photosensitive resin composition, cured film formed from the same, and device having cured film
  • Positive photosensitive resin composition, cured film formed from the same, and device having cured film
  • Positive photosensitive resin composition, cured film formed from the same, and device having cured film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0129] Hereinafter, although an Example is given and this invention is demonstrated more concretely, this invention is not limited to these Examples. In addition, the compounds using abbreviations among the compounds used are as follows.

[0130] DAA: diacetone alcohol

[0131] PGMEA: Propylene Glycol Monomethyl Ether Acetate

[0132] GBL: γ-butyrolactone

[0133] EDM: diethylene glycol methyl ethyl ether

[0134] DPM: dipropylene glycol monomethyl ether.

[0135] In addition, the solid content concentration of the polysiloxane solution and the acrylic resin solution, and the weight average molecular weight (Mw) of the polysiloxane and the acrylic resin were determined as follows.

[0136] (1) Solid content concentration

[0137] 1 g of the polysiloxane solution or the acrylic resin solution was weighed in an aluminum cup, and the liquid component was evaporated by heating at 250° C. for 30 minutes using a hot plate. The solid content remaining in the heated aluminum cup...

Synthetic example 1

[0148] The synthesis of synthetic example 1 polysiloxane solution (a)

[0149] Add 40.86g (0.30 moles) of methyltrimethoxysilane, 99.15g (0.5 moles) of phenyltrimethoxysilane, (2-(3,4-epoxycyclohexyl) ethyl trimethyl 12.32 g (0.05 mol) of oxysilane, 17.63 g (0.15 mol) of Msiliketo 51 ((m=4, average) manufactured by Tama Chemical Industry Co., Ltd.), and 170.77 g of PGMEA were added over 10 minutes while stirring at room temperature A phosphoric acid aqueous solution in which 0.51 g of phosphoric acid (0.3% by weight relative to the added monomer) was dissolved in 53.55 g of water. Then, after immersing the flask in a 40° C. oil bath and stirring for 30 minutes, the oil bath was heated up to 115°C. The internal temperature of the solution reached 100°C 1 hour after the start of heating, and heating and stirring were started for 2 hours (internal temperature was 100-110°C) to obtain a polysiloxane solution (a). In addition, during heating and stirring, the Nitrogen was circulat...

Synthetic example 2

[0151] The synthesis of synthetic example 2 polysiloxane solution (b)

[0152] Add 24.52g (0.18 moles) of methyltrimethoxysilane, 118.98g (0.60 moles) of phenyltrimethoxysilane, (2-(3,4-epoxycyclohexyl) ethyltrimethoxy 14.78 g (0.06 mol) of methyl silane, 42.30 g (0.36 mol) of Msiliketo 51 ((m=4, average) manufactured by Tama Chemical Industry Co., Ltd.), and 181.89 g of PGMEA were added over 10 minutes while stirring at room temperature. A phosphoric acid aqueous solution in which 0.60 g of phosphoric acid (0.3% by weight relative to the added monomer) was dissolved in 62.64 g of water. Then, after immersing the flask in an oil bath at 40° C. and stirring for 30 minutes, the oil bath was heated to 115° C. for 30 minutes. ° C. The internal temperature of the solution reached 100 ° C 1 hour after the heating started, and then heating and stirring was started for 2 hours (the internal temperature was 100 to 110 ° C) to obtain a polysiloxane solution (b). 1 (liter) / min circulate...

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Abstract

Disclosed is a positive photosensitive resin composition which contains (a) a polisiloxane, (b) a naphthoquinone diazide compound, and (c) a solvent. The positive photosensitive resin composition is characterized in that the polysiloxane has: an organosilane-derived structure represented by the general formula (1): at a content ration of 20-80% inclusive of Si relative to the overall number of moles of Si atoms in the polysiloxane; and an organosilane-derived structure represented by general formula (2): The positive photosensitive resin composition exhibits high heat resistance, high transparency, and enables high sensitivity, high resolution patterning. The positive photosensitive resin composition can be used to form cured films such as planarization films used in TFT substrates, interlayer insulating films, core materials and cladding materials, and can be used in elements having cured films such as display elements, semiconductor elements, solid-state imaging elements, and optical waveguide elements.

Description

technical field [0001] The present invention relates to flattening films for thin film transistor (TFT) substrates for liquid crystal display elements, organic EL display elements, etc., protector films, insulating films, interlayer insulating films for semiconductor elements, and solid-state imaging A photosensitive composition for a planarizing film for an element, a microlens array pattern, or a core material and a cladding material of an optical waveguide such as an optical semiconductor element, a cured film formed from the composition, and an element having the cured film. Background technique [0002] In recent years, in liquid crystal displays, organic EL displays, and the like, a method of increasing the aperture ratio of a display device has been known as a method of achieving higher definition and resolution (see Patent Document 1). This is a method capable of increasing the aperture ratio compared to conventional techniques by providing a transparent planarizing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075C08G77/04C08G77/14G03F7/022G03F7/023
CPCC08G77/14C08G77/70C09D183/06G03F7/0757G03F7/004G03F7/023
Inventor 藤原健典内田圭一谷垣勇刚诹访充史
Owner TORAY IND INC
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