A high temperature solar power selective absorption coating with a Si3N4 and AlN double ceramic structure and a preparation method thereof

A technology for absorbing coating and solar energy, applied in the field of solar energy utilization, can solve the problems of low process deposition rate, long production cycle, complex process, etc., and achieve the effects of low price, convenient operation and simple preparation process

Inactive Publication Date: 2012-09-26
北京天瑞星光热技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, processes such as double-target or multi-target co-sputtering and RF sputtering have low deposition rates, long production cycles, complex processes, and high costs.

Method used

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  • A high temperature solar power selective absorption coating with a Si3N4 and AlN double ceramic structure and a preparation method thereof
  • A high temperature solar power selective absorption coating with a Si3N4 and AlN double ceramic structure and a preparation method thereof
  • A high temperature solar power selective absorption coating with a Si3N4 and AlN double ceramic structure and a preparation method thereof

Examples

Experimental program
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preparation example Construction

[0024] The present invention proposes a kind of Si 3 N 4 and the preparation method of AlN double ceramic structure high temperature solar energy selective absorption coating, such as figure 2 shown, including the following steps:

[0025] Step 1: preparing the first infrared emitting layer on the substrate;

[0026] The direct current or intermediate frequency magnetron sputtering method of pure metal target is adopted. The pure metal target is Cu target or Ag target (purity 99.99%), prepared with Ar gas as sputtering gas, and the substrate is made of high-speed steel. Before sputtering, the vacuum chamber was pre-evacuated to a background vacuum of 4×10 -3 ~5×10 -3 Pa, the inert gas Ar is introduced as the sputtering atmosphere, the Ar gas flow rate is 100~140sccm, the sputtering distance is adjusted to 130~150mm, and the sputtering pressure is adjusted to 3×10 -1 ~4×10 -1Pa. Turn on the power supply of the sputtering target of the pure metal target, adjust the sputt...

Embodiment 1

[0034] This embodiment provides a Si 3 N 4 And AlN double ceramic structure high-temperature solar selective absorption coating, including three coatings, namely the first infrared emission layer, the second absorption layer, and the third anti-reflection layer. The first layer is a Cu film with a thickness of 180nm. The total thickness of the second layer is 160nm, wherein the thickness of the first sublayer is 100nm, the thickness of the second sublayer is 60nm, and the Si in the first sublayer 3 N 4 The volume percentage is 25%, the rest is AlN; the second sublayer Si 3 N 4 The volume percentage is 15% and the rest is AlN; the third layer is an AlN film with a thickness of 50nm. The preparation steps are as follows:

[0035] Step 1: preparing the first infrared emitting layer on the substrate;

[0036] The Cu target with purity and purity of 99.99% is selected, and the base material is high-speed steel. Before sputtering, the vacuum chamber was pre-evacuated to a bac...

Embodiment 2

[0044] This embodiment provides a Si 3 N 4 And AlN double ceramic structure high temperature solar selective absorption coating, the coating includes three layers of film, from the bottom to the surface are infrared emission layer, absorption layer and anti-reflection layer;

[0045] The first infrared emitting layer is composed of Cu film with a thickness of 50nm; the second absorbing layer consists of two sublayer structures, both of which are Si 3 N 4 and AlN film, the thickness of the first sublayer and the second sublayer are both 50nm, and the Si in the first sublayer 3 N 4 The volume percentage is 20%, and the rest is AlN; the second sublayer Si 3 N 4 The volume percentage is 10%, and the rest is AlN; the third layer of anti-reflection layer is made of SiO 2 film with a thickness of 20 nm.

[0046] A kind of Si with Si proposed in this example 3 N 4 The preparation method of the high-temperature solar energy selective absorption coating with AlN double ceramic ...

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Abstract

The invention provides a high temperature solar power selective absorption coating with a Si3N4 and AlN double ceramic structure and a preparation method thereof, belonging to a technology field of solar power utilization. An infrared emission layer, an absorbing layer, an antireflection layer are arranged in sequence from a bottom layer of the coating to a surface layer, wherein the first infrared emission layer consists of a Cu film or an Ag film, with a thickness ranging from 50 to 150 nm, the second layer absorbing layer includes a two-sublayer structure with both sublayers being an Si3N4 and AIN film, and the third antireflection layer is a SiO2 film with a thickness being 20 to 60 nm. The coating provided in the invention is characterized by a high absorption rate within a visible-infrared spectrum and a low emission rate within an infrared spectrum. The coating has favorable middle-and-high temperature heat stability by adopting an interference absorbing layer of the double ceramic structure. The coating has advantages of simply preparation technique, easy operation, easy control, and shortened production cycle.

Description

technical field [0001] The invention belongs to the technical field of solar energy utilization, in particular to a 3 N 4 High temperature solar selective absorption coating with AlN double ceramic structure and preparation method thereof. Background technique [0002] The solar spectrum selective absorption coating has a high absorption rate in the visible-near-infrared band and a functional film with a low emissivity in the infrared band, which is the key to improving the efficiency of light-to-heat conversion for solar collectors. With the continuous development of solar heat utilization requirements and technology, the application range of solar collector tubes has been developed from low temperature applications (≤100°C) to medium temperature applications (100°C-350°C) and high temperature applications (350°C-500°C). Meet the requirements of medium and high temperature applications such as seawater desalination and solar power generation. The selective absorption coa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B15/18B32B15/04C23C14/08C23C14/06C23C14/35
Inventor 张秀廷陈步亮范兵刘雪莲王静杨兴张晋
Owner 北京天瑞星光热技术有限公司
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