Preparation method for colloidal stannic sulfide hollow nanoparticles

A technology of hollow nanoparticles and nanoparticles, which is applied in chemical instruments and methods, nanotechnology, inorganic chemistry, etc., can solve the problems of failing to obtain hollow nanoparticles of tin sulfide, and achieve the effects of easy control, convenient operation and high purity

Inactive Publication Date: 2014-05-14
TIANJIN UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the existing synthesis process fails to obtain tin sulfide hollow nanoparticles, and utilize the characteristics of the surface reaction between the sputtered metal nano-droplets and the surrounding liquid medium in the long-pulse millisecond laser liquid phase ablation technology, Provide a method for the controllable synthesis of high-purity colloidal tin sulfide (SnS) hollow nanoparticles in liquid phase using millisecond laser and chemical etching

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  • Preparation method for colloidal stannic sulfide hollow nanoparticles
  • Preparation method for colloidal stannic sulfide hollow nanoparticles
  • Preparation method for colloidal stannic sulfide hollow nanoparticles

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Embodiment Construction

[0026] Such as figure 1 As shown in (a), put a tin target with a purity of 99.99% and a thickness of 5 mm in 12 mL of ethanol solution of thioacetamide (TAA), the distance between the liquid surface and the upper surface of the tin target is about 5 mm, and use millisecond pulse Nd:YAG The laser (fundamental frequency 1064nm) is focused to irradiate the target surface, and the laser power density is 10 6 W / cm 2 , pulse width 1.5ms, repetition frequency 5Hz. The laser irradiation process is protected by an argon flow with a flow rate of 60 sccm to prevent oxidation of tin.

[0027] When the long-pulse millisecond laser irradiates the tin target in the liquid medium, due to its power density (10 6 W / cm 2 ) than the nanosecond laser power density (10 8 -10 10 W / cm 2 ) is at least two orders of magnitude lower. Therefore, the millisecond laser can heat the irradiation area of ​​the target surface relatively mildly and sputter out many tin nano-droplets from the target surfa...

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Abstract

The invention discloses a preparation method for colloidal stannic sulfide hollow nanoparticles. The preparation method comprises the steps as follows: taking a block-shaped metal tin target as a raw material; placing the block-shaped metal tin target into a sulfur source-containing ethanol solution; and controllably synthesizing the high-purity colloidal stannic sulfide (SnS) hollow nanoparticles by utilizing a millisecond laser and chemical etching method in a liquid phase according to the characteristic of the surface reaction of the sputtered metal nanometer liquid drops and the surrounding liquid medias in the long-pulse millisecond laser liquid phase ablation technology. The preparation method is simple in process, convenient to operate and easy to control, doesn't have byproducts and impurities, belongs to normal pressure and temperature synthesis, and is an environment-friendly green synthesis process.

Description

technical field [0001] The invention relates to tin sulfide (SnS) hollow nanoparticles, in particular to a method for preparing a colloidal solution of tin sulfide hollow nanoparticles. Background technique [0002] As a narrow bandgap semiconductor, tin-containing chalcogenides have good optical activity in the near-infrared and infrared spectral ranges, and have broad application prospects in the field of infrared optics. See: Y.Xu, N.Al-Salim, C.W.Bumby et al al, Journal of the American Chemical Society, 2009, 131, 15990-15991. In addition, tin-containing chalcogenides are a class of non-toxic and environmentally friendly materials, which are expected to become ideal substitutes for toxic narrow-bandgap semiconductor materials such as PbS, PbSe, and PbTe, see: J.Ning, K.Men, G. Xiao et al, Nanoscale, 2010, 2, 1699-1703. Among tin chalcogenides, tin sulfide (SnS) has a stable layered orthorhombic crystal structure with a direct bandgap of 1.3 eV, which can efficiently ab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/00B82Y40/00
Inventor 杨静杜希文孙明艳
Owner TIANJIN UNIV
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