Process for manufacturing series of intermediate-voltage N-type vertical conduction double-diffused metal oxide semiconductor transistors by using composite epitaxy

A field effect transistor and manufacturing process technology, applied in the field of manufacturing medium-voltage N-type series VDMOS process, can solve the problem of on-resistance drop and so on

Inactive Publication Date: 2012-10-03
WUXI CRYSTAL SOURCE MICROELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The measured withstand voltage of the medium-voltage series VDMOS made by the composite epitaxy process is still 650V, but the on-resistance is 10% lower than that of the VDMOS made by the ordinary process.

Method used

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  • Process for manufacturing series of intermediate-voltage N-type vertical conduction double-diffused metal oxide semiconductor transistors by using composite epitaxy
  • Process for manufacturing series of intermediate-voltage N-type vertical conduction double-diffused metal oxide semiconductor transistors by using composite epitaxy
  • Process for manufacturing series of intermediate-voltage N-type vertical conduction double-diffused metal oxide semiconductor transistors by using composite epitaxy

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Embodiment Construction

[0046] Such as figure 2 Shown is a composite epitaxy process for manufacturing medium-voltage series vertical double-diffused field effect transistors. The specific implementation method is as follows:

[0047] 1) Feeding: arsenic-doped or antimony-doped substrate silicon wafer material, with a resistivity of 0.03ohm.cm or below.

[0048] 2) The first step of epitaxy: grow N-type epitaxy with a thickness of 4um and a resistivity of 1 ohm.cm. It is used to form a high-concentration transition zone with a high-concentration substrate. On-resistance can be reduced.

[0049] 3) The second step of epitaxy: grow N-type epitaxy with a thickness of 4um and a resistivity of 10 ohm.cm. It is used to epitaxially form a medium-concentration transition region with the high-concentration first part. On-resistance can also be reduced.

[0050] 4) The third step of epitaxy: grow N-type epitaxy with a thickness of 42um and a resistivity of 18 ohm.cm. Provide a withstand voltage layer fo...

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Abstract

The invention discloses a process for manufacturing series of intermediate-voltage N-type vertical conduction double-diffused metal oxide semiconductor (VDMOS) transistors by using composite epitaxy. The process comprises the steps of: batch feeding, first-step epitaxy, second-step epitaxy, third-step epitaxy, fourth-step epitaxy, field oxidation, etching of an active area, high-concentration boron injection and junction depth increasing, phosphorus injection and junction depth increasing, gate oxidation, polycrystalline silicon gate deposition and doping, PWELL boron injection and junction depth increasing, source N+ arsenic injection and junction depth increasing, contact hole etching, aluminum evaporation and corrosion, back thinning evaporation and the like. By a process platform, any additional procedure and operation is avoided, and on-resistance can be lowered by 10 percent on the basis of ensuring withstand voltage; by the VDMOS transistor manufactured by the process, a high-current intense-electric field effect can be effectively suppressed, and the safety working area of a device is enlarged to a certain extent; and the on-resistance is lowered, so that power consumption is greatly reduced, energy sources are saved, and the reliability of a circuit is greatly improved.

Description

technical field [0001] The invention relates to a VDMOS process method for manufacturing medium-voltage resistant N-type series (withstand voltage 600V, conduction current ranging from 1 ampere to 15 amperes), and belongs to the technical field of semiconductor manufacturing. Background technique [0002] The full name of VDMOS is Vertical conduction double-diffused metal oxide semiconductor, that is, vertical double-diffused metal oxide semiconductor field effect transistor, which was proposed by H.W.Collins et al. in 1979. [0003] After more than 30 years of development, VDMOS transistors have made great progress. With a series of advantages such as high input impedance, low on-resistance and high switching speed, it has been widely used in switching regulated power supplies, high-frequency heating, computer interface circuits and power amplifiers. To be sure, with the further deepening of people's understanding of energy saving and emission reduction, the switching powe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336
Inventor 聂卫东沈克强易法友
Owner WUXI CRYSTAL SOURCE MICROELECTRONICS CO LTD
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