Manufacturing method of MOS (Metal Oxide Semiconductor) transistor structure integrated with resistive random access memory

Abstract

The invention belongs to the technical field of semiconductor memories below 20nmm and more particularly relates to a manufacturing method of an MOS (Metal Oxide Semiconductor) transistor structure integrated with a resistive random access memory. According to the manufacturing method disclosed by the invention, a source region and a drain region of the MOS transistor are formed by a self-aligned technology, a high-quality gate dielectric layer of the MOS transistor and a resistive random access memory layer of the resistive random access memory are deposited by a primary atomic layer deposition process, and the resistive random access memory and the MOS transistor are integrated together on the premise of not increasing extra process steps. The manufacturing method disclosed by the invention can be compatible with a shallow trench isolation process, or a field oxide layer isolation process and a source / drain ion implantation or diffusion process, is simple in process steps and provides convenience for process integration and devices to develop towards a miniaturization direction.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory below 20 nanometers, and in particular relates to a method for manufacturing a field effect transistor structure of an integrated resistive variable memory. Background technique [0002] The resistance value of the resistive memory layer of the resistive memory has two different states of high resistance state and low resistance state under the action of an applied voltage, which can be used to represent two states of "0" and "1" respectively. Under different applied voltage conditions, the resistance value of the RRAM can be reversibly switched between a high-resistance state and a low-resistance state, so as to realize information storage. Resistive memory has the advantages of simple preparation, high storage density, low operating voltage, fast read and write speed, long retention time, non-destructive read, low power consumption, and traditional CMOS (that is, complementary metal...

AI Technical Summary

Problems solved by technology

[0007] As mentioned above, the integration process of resistive memory and MOS transistors is complicated, which is not conducive to process integration and the development of devices in the direction of miniaturization

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