Electromagnetic energy harvester with flexible substrate and method for preparing electromagnetic energy harvester

An energy harvester and flexible substrate technology, applied in electromechanical devices, electrical components, manufacturing microstructure devices, etc., can solve the problems of difficult adhesion of permanent magnets and low output energy, and achieve small size, high output power, and good biocompatibility. sexual effect

Inactive Publication Date: 2012-10-10
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The structure is relatively novel, but the adhesion of the permanent magnet is difficult, and the output energy is too low

Method used

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  • Electromagnetic energy harvester with flexible substrate and method for preparing electromagnetic energy harvester
  • Electromagnetic energy harvester with flexible substrate and method for preparing electromagnetic energy harvester
  • Electromagnetic energy harvester with flexible substrate and method for preparing electromagnetic energy harvester

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Embodiment 1: comprise the steps:

[0048] (1) Preparation of Parylene film

[0049] Silicon wafer cleaning and other treatment processes, such as Figure 5 (a) shown. A 10 μm thick Parylene film was prepared on a silicon wafer by vacuum deposition (ie evaporation and condensation method). The solid Parylene raw material is sublimated into a gaseous state at 120°C in vacuum, and the gaseous raw material is cracked into reactive monomers at 650°C. The gaseous monomers are deposited and polymerized at room temperature to form a Parylene film, such as Figure 5 (b) shown. In addition to silicon wafers, other substrates such as glass can also be used.

[0050] (2) Sputtering Ti / Cu seed layer

[0051] The Ti / Cu seed layer was prepared by vacuum sputtering. Sputtering for 1 hour under the condition of 50W power in a vacuum environment can obtain a Ti / Cu seed layer with a total thickness of 200nm, such as Figure 5 (c) shown.

[0052] (3) Cu coil preparation

[0053] ...

Embodiment 2

[0062] Embodiment 2: comprise the steps:

[0063] (1) Preparation of Parylene film

[0064] Carry out cleaning and other treatment processes on silicon wafers. A 10 μm Parylene film was prepared on a silicon wafer by vacuum deposition. The solid raw material is sublimated into a gaseous state at 120°C in vacuum, and the gaseous raw material is cracked into reactive monomers at 650°C, and the gaseous monomers are deposited and polymerized at room temperature to form a Parylene film.

[0065] (2) Sputtering Ti / Cu seed layer

[0066] A 200 nm Ti / Cu seed layer was prepared by vacuum sputtering. A Ti / Cu seed layer with a total thickness of 200 nm can be obtained by sputtering for 30 min under the condition of 100 W power in a vacuum environment.

[0067] (3) Cu coil preparation

[0068] Spin-coat 10μm thick positive resist AZ P4620 on the Ti / Cu seed layer, expose for 180s, develop for 100s, and then electroplate Cu coils. Electroplating conditions: the current density is 10mA...

Embodiment 3

[0077] Embodiment 3: comprise the steps:

[0078](1) Preparation of Parylene film

[0079] Carry out cleaning and other treatment processes on silicon wafers. A 10 μm Parylene film was prepared on a silicon wafer by vacuum deposition. The solid raw material is sublimated into a gaseous state at 120°C in vacuum, and the gaseous raw material is cracked into reactive monomers at 650°C, and the gaseous monomers are deposited and polymerized at room temperature to form a Parylene film.

[0080] (2) Sputtering Ti / Cu seed layer

[0081] A 200 nm Ti / Cu seed layer was prepared by vacuum sputtering. A Ti / Cu seed layer with a total thickness of 200 nm can be obtained by sputtering for 1 hour under the condition of a power of 50 W in a vacuum environment.

[0082] (3) Cu coil preparation

[0083] Spin-coat 10μm thick positive resist AZ P4620 on the Ti / Cu seed layer, expose for 180s, develop for 100s, and then electroplate Cu coils. Electroplating conditions: the current density is 5...

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Abstract

The invention provides an electromagnetic energy harvester. The electromagnetic energy harvester comprises a cavity which is formed by a flexible structural layer, and a permanent magnet block which is packaged in the cavity, wherein the flexible structural layer comprises the flexible substrate, and planar coils and a permanent magnet array, which are positioned on the flexible substrate; the permanent magnet array is prepared by using an electroplating method; and the cavity is formed in a folding mode preferably. The energy harvester is compatible with an integrated circuit (IC) process and can be applied to special environment in which device deformation is required. When the flexible substrate is made of a flexible material with bio-compatibility, the energy harvester can be applied to organisms such as built-in bio-sensors, biomedical monitoring and living organism detection.

Description

technical field [0001] The invention belongs to the field of microelectromechanical systems, and relates to an energy harvester and a preparation method thereof, in particular to a microelectromechanical system electromagnetic energy harvester based on a flexible substrate and a preparation method thereof, which can collect environmental low-frequency motion energy. Background technique [0002] With the continuous growth of social production demand and the rapid development of micro-nano technology, a large number of new micro-nano devices and systems have been continuously developed and widely used, especially the delivery of nano-drugs with biocompatibility for disease prevention and treatment. and micro-nano systems for targeted therapy. At present, these micro-nano systems mainly rely on batteries for power supply, and the battery life is generally short and needs to be replaced constantly. For small micro-nano products, replacing the battery is a complicated operation...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02K35/02B81C1/00
Inventor 张海霞张守鹤袁泉贾若溪韩梦迪
Owner PEKING UNIV
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