BiCMOS (bipolar complementary metal oxide semiconductor) integrated device based on plane-strained SiGe HBT (heterojunction bipolar transistor) device and fabrication method

An integrated device, plane strain technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as affecting device performance, difficult to meet design, and inability to meet low power consumption

Inactive Publication Date: 2012-10-17
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, when the feature size is less than 100nm, due to problems such as tunneling leakage current and reliability, the traditional gate dielectric material SiO 2 Unable to meet the requirements of low power consumption; the short channel effect and narrow channel effect of nanometer devices are becoming more and more obvious, which seriously affects the device performance; traditional lithography technology cannot meet the shrinking lithography precision
Therefore, traditional Si-based process devices are increasingly difficult to meet the needs of design

Method used

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  • BiCMOS (bipolar complementary metal oxide semiconductor) integrated device based on plane-strained SiGe HBT (heterojunction bipolar transistor) device and fabrication method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0123] Embodiment 1: The BiCMOS integrated device and circuit based on the plane-strained SiGe HBT device with a channel length of 22nm are prepared, and the specific steps are as follows:

[0124] Step 1, SOI substrate material preparation.

[0125] (1a) Select the N-type doping concentration as 1×10 15 cm -3 The Si sheet is oxidized on its surface, and the thickness of the oxide layer is 1 μm, which is used as the base material of the upper layer, and hydrogen is injected into the base material;

[0126] (1b) Select the N-type doping concentration as 1×10 15 cm -3 The Si sheet is oxidized on its surface, and the thickness of the oxide layer is 1 μm, which is used as the base material of the lower layer;

[0127] (1c) Using a chemical mechanical polishing (CMP) process to polish the surface of the lower layer and the upper layer of substrate material after hydrogen injection;

[0128](1d) Put the oxide layer on the surface of the polished lower layer and the upper layer ...

Embodiment 2

[0193] Embodiment 2: The BiCMOS integrated device and circuit based on the plane-strained SiGe HBT device with a channel length of 130 nm are prepared, and the specific steps are as follows:

[0194] Step 1, SOI substrate material preparation.

[0195] (1a) Select the N-type doping concentration as 3×10 15 cm -3 The Si sheet is oxidized on its surface, and the thickness of the oxide layer is 0.7 μm, which is used as the base material of the upper layer, and hydrogen is injected into the base material;

[0196] (1b) Select the N-type doping concentration as 3×10 15 cm -3 The Si sheet is oxidized on its surface, and the thickness of the oxide layer is 0.7 μm, which is used as the base material of the lower layer;

[0197] (1c) Using a chemical mechanical polishing (CMP) process to polish the surface of the lower layer and the upper layer of substrate material after hydrogen injection;

[0198] (1d) Put the oxide layer on the surface of the polished lower layer and the upper...

Embodiment 3

[0263] Embodiment 3: The BiCMOS integrated device and circuit based on the plane-strained SiGe HBT device with a channel length of 350 nm are prepared, and the specific steps are as follows:

[0264] Step 1, SOI substrate material preparation.

[0265] (1a) Select the N-type doping concentration as 5×10 15 cm -3 The Si sheet is oxidized on its surface, and the thickness of the oxide layer is 0.5 μm, which is used as the base material of the upper layer, and hydrogen is injected into the base material;

[0266] (1b) Select the N-type doping concentration as 5×10 15 cm -3 The Si sheet is oxidized on its surface, and the thickness of the oxide layer is 0.5 μm, which is used as the base material of the lower layer;

[0267] (1c) Using a chemical mechanical polishing (CMP) process to polish the surface of the substrate material of the lower layer and the upper layer of the active layer after injecting hydrogen, respectively;

[0268] (1d) Put the oxide layer on the surface of ...

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Abstract

The invention discloses a BiCMOS (bipolar complementary metal oxide semiconductor) integrated device based on plane-strained SiGe HBT (heterojunction bipolar transistor) device and a fabrication method. The fabrication method comprises preparing a SOI (silicon on insulator) substrate, etching an active region of a bipolar device, growing a collector region of the bipolar device, etching a base region by lithography, growing P-SiGe, i-Si, i-Poly-Si on the base region, preparing deep trench isolation; forming an emitter, a base and a collector, and forming the SiGe HBT device; and etching the active region of a MOS (metal oxide semiconductor) by lithography, continuously growing a Si buffer layer, a strain SiGe layer, and an intrinsic Si layer in the region, respectively forming the active region of an NMOS (N-channel metal oxide semiconductor) and PMOS (P-channel metal oxide semiconductor) device, depositing SiO2 and polysilicon on the active region of the NMOS and PMOS devices, etching to prepare a pseudo gate with a length of 22 to 350nm, forming a lightly-doped source drain and source drain of the NMOS and PMOS devices by self-alignment process, removing the pseudo gate, preparing a gate from a gate dielectric lanthanum oxide and tungsten, metalizing, and etching a lead by lithography to form the BiCMOS integrated device and the circuit. According to the BiCMOS integrated device based on plane-strained SiGe HBT device and the fabrication method provided by the invention, the lightly-doped source drain structure is adopted to effectively suppress the influences of hot carriers on the device performance so as to improve the reliability of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a BiCMOS integrated device based on a plane strain SiGeHBT device and a preparation method. Background technique [0002] Semiconductor integrated circuit technology is the core technology of high-tech and information industries, and has become an important symbol to measure a country's scientific and technological level, comprehensive national strength and national defense strength, while microelectronic technology represented by integrated circuits is the key to semiconductor technology. The semiconductor industry is the basic industry of the country. The reason why it develops so fast is not only the huge contribution of technology itself to economic development, but also its wide applicability. [0003] Gordon Moore, one of the founders of Intel, proposed "Moore's Law" in 1965, which states that the number of transistors on an integrated ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/06H01L21/8249H01L21/28
Inventor 胡辉勇张鹤鸣宋建军王海栋舒斌宣荣喜戴显英郝跃
Owner XIDIAN UNIV
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