Three-strained fully planar SOI (silicon on insulator) BiCMOS (bipolar complementary metal oxide semiconductor) integrated device and preparation method

Abstract

The invention discloses a three-strained fully planar SOI BiCMOS integrated device and a preparation method. The preparation method comprises continuously growing an N-Si layer, a P-SiGe layer and an N-Si layer on an SOI substrate, preparing deep trench isolation, etching a collector region, a base region and a shallow trench isolation region by lithography respectively, carrying out ion implantation, forming a collector, base and emitter contact region, and finally forming a SiGe HBT (heterojunction bipolar transistor) device; etching a trench in the active region of an NMOS (n-type metal oxide semiconductor) by lithography, growing four material layers in the trench, and preparing a gate dielectric layer and gate polysilicon on the active region of the NMOS device to obtain the NMOS device; etching a trench in the active region of a PMOS (p-type metal oxide semiconductor) by lithography, growing three material layers in the trench, and preparing a drain and a gate on the active region of the PMOS device to obtain the PMOS device; and etching leads by lithography to obtain the three-strained fully planar SOI BiCMOS integrated device and circuit. The preparation method provided by the invention adopts the self-alignment process, and fully utilizes the characteristics that the electron mobility of a tensile strained Si material is higher than that of a bulk Si material and that the hole mobility of a compressive strained SiGe material is higher than that of the bulk Si material so as to prepare the performance-enhanced three-strained fully planar SOI BiCMOS integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a three-strain full-plane SOI BiCMOS integrated device and a preparation method. Background technique [0002] Integrated circuits are the cornerstone and core of the economic development of an information society. Just as the American engineering and technology circle recently named the fifth electronic technology among the 20 greatest engineering and technological achievements in the world in the 20th century, "from vacuum tubes to semiconductors and integrated circuits, they have become the cornerstone of intelligent work in various industries today." Integrated circuits. It is one of the typical products that can best reflect the characteristics of knowledge economy. At present, the electronic information industry based on integrated circuits has become the world's largest industry. With the development of integrated circuit technology,...

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Problems solved by technology

Although GaAs and InP-based compound devices have superior frequency characteristics, their preparation process is more complicated than Si process, high cost, difficult to prepare large-diameter single crystal, low mechanical strength, poor heat dissipation performance, incompatibility with Si process and lack of SiO 2 Such passivation layer and other factors limit its wide application and development.

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