Strain Si BiCMOS (Bipolar-Complementary Metal-Oxide-Semiconductor) integrated device based on SOI (Silicon on Insulator) substrate and preparation method thereof

Abstract

The invention discloses a strain Si BiCMOS (Bipolar-Complementary Metal-Oxide-Semiconductor) integrated device based on an SOI (Silicon on Insulator) substrate and a preparation method thereof. The preparation method comprises the following steps: growing N-type Si epitaxy on the SOI substrate, preparing trench isolation, and manufacturing a conventional Si bipolar transistor in a bipolar device region; respectively photoetching the ditch grooves of the active regions of an NMOS (Negative-channel Metal Oxide Semiconductor) and a PMOS (Positive-channel Metal Oxide Semiconductor) devices, continuously growing an Si buffer layer, a gradually varied SiGe layer, a fixed component SiGe layer and an N-type strain Si channel layer in the ditch groove of the active region of the NMOS device and continuously growing an Si buffer layer, a gradually varied SiGe layer, a fixed component SiGe layer, a strain Si P-LDD layer, a strain Si channel layer, a strain Si P-LDD layer and a fixed component SiGe layer in the ditch groove of the active region of the PMOS device, and preparing a drain and a grid on the active region of the PMOS device to form the PMOS device; preparing a gate dielectric layer and a gate polycrystal in the active region of the NMOS device to form the NMOS device; and photoetching leads to form an Si BICMOS integrated circuit in which an MOS (Metal Oxide Semiconductor) conducting channel is 22-45nm. According to the invention, based on the full use of the characteristic that tension strain Si material has mobility anisotropism, the strain Si BiCMOS integrated device with strengthened performance based on SOI substrate and the circuit thereof are prepared at the temperature of 600-800 DEG C.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, in particular to a strained Si BiCMOS integrated device based on an SOI substrate and a preparation method. Background technique [0002] The integrated circuit that appeared in 1958 is one of the most influential inventions of the 20th century; microelectronics, which was born based on this invention, has become the basis of existing modern technology, accelerating the process of knowledge and informationization of human society, and at the same time It has also changed the human way of thinking; it not only provides humans with a powerful tool to transform nature, but also opens up a broad space for development. [0003] Semiconductor integrated circuits have become the basis of the electronics industry. People's huge demand for the electronics industry has prompted the rapid development of this field; in the past few decades, the rapid development of the electronics i...

AI Technical Summary

Problems solved by technology

[0008] Due to the low mobility of Si material carrier materials, the performance of integrated circuits manufactured using Si BiCMOS technology, especially the frequency performance, is greatly limited; for SiGe BiCMOS technology, although SiGe HBT is used for bipolar transistors, However, Si CMOS is still used for unipolar devices that restrict the improvement of the frequency characteristics of BiCMOS integrated circuits, so these limit the further improvement of the performance of BiCMOS integrated circuits

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