Method for producing solar cell gate electrode
A technology for solar cells and grid electrodes, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of reduced battery conversion efficiency, increased electrode loss, and waste of silver-containing paste, and achieves reduced surface coverage. Facilitate precise control and improve production efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0026] The method for preparing the front grid electrode of a solar cell according to the present invention will be further described below with reference to the accompanying drawings.
[0027] Raw material: double-sided polished N-type silicon wafer 10, resistivity 2-4Ωem, crystal orientation , silicon wafer thickness 400μm, such as figure 1 (a) shown.
[0028] First, according to figure 1 The process flow shown is to make the main grid and auxiliary grid templates required for the grid electrode of the solar cell, and then use the physical vapor deposition method to form the grid electrode on the solar cell through these two templates. The specific steps are as follows:
[0029] 1) grow silicon carbide (SiC) films 21 and 22 on both sides of the silicon substrate 10 by plasma-enhanced chemical vapor deposition (PECVD), such as figure 1 as shown in (b);
[0030] The conditions for growing SiC films by PECVD are preferably: pressure 700-1200mTorr, temperature 200-400°C, SiH ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 