Method for preparing nitrogen-doped graphene by utilizing plasma sputtering
A technology of nitrogen-doped graphene and plasma sputtering is applied in the field of nanomaterial catalytic doping, which can solve the problems of low synthesis efficiency and quality, and achieve the effect of broad application prospects.
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[0023] Example 1: Nitrogen-doped experimental operation using graphene prepared from nickel foil and an operating voltage of 600V.
[0024] First, the nickel foil was ultrasonically cleaned in deionized water, acetone, and ethanol for 30 minutes, and the reaction substrate was blown dry with high-purity nitrogen, dried and allowed to stand for 5 minutes; then, the nickel foil was put into the CVD device with a flow rate of 15 sccm Control the reactor to rise to 850°C within 30 minutes, keep the CVD device running at high temperature for 60 minutes, and pass methane at a flow rate of 75 sccm into the CVD device; then control the temperature of the CVD device to drop to room temperature within 5 minutes, and take out the growth. The graphene nickel foil is put into the reaction chamber of the plasma sputtering device, the vacuum environment of the reaction chamber is controlled below 5mTorr by a vacuum pump, and 5sccm ammonia gas is passed into the reaction chamber, where the operat...
Example Embodiment
[0025] Example 2: Nitrogen-doped experimental operation using graphene prepared from nickel foil and operating voltage of 400V.
[0026] First, the nickel foil was ultrasonically cleaned in deionized water, acetone, and ethanol for 30 minutes, and the reaction substrate was blown dry with high-purity nitrogen, dried and allowed to stand for 10 minutes; then the nickel foil was put into the CVD device, and a flow rate of 15 sccm was introduced. Control the reactor to rise to 850°C within 30 minutes, keep the CVD device running at high temperature for 60 minutes, and pass methane at a flow rate of 75 sccm into the CVD device; then control the temperature of the CVD device to drop to room temperature within 5 minutes, and take out the growth. The graphene nickel foil is put into the reaction chamber of the plasma sputtering device, the vacuum environment of the reaction chamber is controlled below 5mTorr by a vacuum pump, and 5sccm ammonia gas is passed into the reaction chamber, whe...
Example Embodiment
[0027] Example 3: Nitrogen-doped experimental operation with graphene prepared by nickel foil and an operating voltage of 200V.
[0028] Firstly, the nickel foil was ultrasonically cleaned in deionized water, acetone, and ethanol for 30 minutes, and the reaction substrate was blown dry with high-purity nitrogen, dried and allowed to stand for 5 minutes; then the nickel foil was put into the CVD device, and a flow rate of 15 sccm was introduced. Control the reactor to rise to 850°C within 30 minutes, keep the CVD device running at a high temperature for 60 minutes, and pass methane at a flow rate of 75sccm into the CVD device; then control the temperature of the CVD device to drop to room temperature within 5 minutes, and take out the growth. The graphene nickel foil is put into the reaction chamber of the plasma sputtering device, the vacuum environment of the reaction chamber is controlled below 5mTorr by a vacuum pump, and 5sccm ammonia gas is passed into the reaction chamber, w...
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