Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nitrogen-doped graphene by utilizing plasma sputtering

A technology of nitrogen-doped graphene and plasma sputtering is applied in the field of nanomaterial catalytic doping, which can solve the problems of low synthesis efficiency and quality, and achieve the effect of broad application prospects.

Inactive Publication Date: 2012-10-24
ZHEJIANG UNIV
View PDF3 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the methods of doping graphene with nitrogen mainly include hydrothermal synthesis, chemical synthesis, etc., and the synthesis efficiency and quality of these methods are generally low, which needs to be improved urgently.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nitrogen-doped graphene by utilizing plasma sputtering
  • Method for preparing nitrogen-doped graphene by utilizing plasma sputtering
  • Method for preparing nitrogen-doped graphene by utilizing plasma sputtering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1: Experimental operation of nitrogen doping with graphene prepared from nickel foil and operating voltage of 600V.

[0024] First, the nickel foil was ultrasonically cleaned in deionized water, acetone and ethanol for 30 minutes respectively, and the reaction substrate was blown dry with high-purity nitrogen gas and left to stand for 5 minutes; then the nickel foil was put into the CVD device, and a flow rate of 15 sccm was introduced control the reaction furnace to rise to 850°C within 30 minutes, keep the CVD device running at a high temperature for 60 minutes, and feed 75 sccm of methane into the CVD device; then control the temperature of the CVD device to drop to normal temperature within 5 minutes, and take out the grown The nickel foil of graphene is also put into the reaction chamber of plasma sputtering device, utilizes vacuum pump to control the vacuum environment of reaction chamber below 5mTorr, and feeds the ammonia gas of 5sccm flow in reaction cha...

Embodiment 2

[0025] Example 2: Experimental operation of nitrogen doping with graphene prepared from nickel foil and operating voltage of 400V.

[0026] First, the nickel foil was ultrasonically cleaned in deionized water, acetone and ethanol for 30 minutes respectively, and the reaction substrate was blown dry with high-purity nitrogen gas and allowed to stand for 10 minutes; then the nickel foil was put into the CVD device, and a flow rate of 15 sccm was introduced. control the reaction furnace to rise to 850°C within 30 minutes, keep the CVD device running at a high temperature for 60 minutes, and feed 75 sccm of methane into the CVD device; then control the temperature of the CVD device to drop to normal temperature within 5 minutes, and take out the grown The nickel foil of graphene is also put into the reaction chamber of plasma sputtering device, utilizes vacuum pump to control the vacuum environment of reaction chamber below 5mTorr, and feeds the ammonia gas of 5sccm flow in reactio...

Embodiment 3

[0027] Embodiment 3: Nitrogen-doped experimental operation carried out using graphene prepared from nickel foil with an operating voltage of 200V.

[0028] First, the nickel foil was ultrasonically cleaned in deionized water, acetone and ethanol for 30 minutes respectively, and the reaction substrate was blown dry with high-purity nitrogen gas and left to stand for 5 minutes; then the nickel foil was put into the CVD device, and a flow rate of 15 sccm was introduced control the reaction furnace to rise to 850°C within 30 minutes, keep the CVD device running at a high temperature for 60 minutes, and feed 75 sccm of methane into the CVD device; then control the temperature of the CVD device to drop to normal temperature within 5 minutes, and take out the grown The nickel foil of graphene is also put into the reaction chamber of plasma sputtering device, utilizes vacuum pump to control the vacuum environment of reaction chamber below 5mTorr, and feeds the ammonia gas of 5sccm flow...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for preparing nitrogen-doped graphene by utilizing plasma sputtering, and nitrogen elements are accurately doped and inlaid into a graphene structure by utilizing a plasma sputtering technology. The method comprises the following steps of firstly sequentially and respectively ultrasonically cleaning a reaction substrate in deionized water, acetone and ethanol for 30 minutes and blow-drying with highly-purified gas, then placing the reaction substrate in a chemical vapor-deposition device to grow a single-layer or multilayer graphene film on a surface layer of the reaction substrate by utilizing a chemical deposition method, subsequently placing the reaction substrate with the grown graphene in a plasma sputtering device and doping the nitrogen elements which are ionized by utilizing a high voltage into the graphene structure in a vacuum environment, and finally completely and cleanly corroding the reaction substrate to obtain the doped graphene. The method for preparing the nitrogen-doped graphene which is provided by the invention is convenient to operate, has a simple flow, can be widely applied to industrialized mass production and is applicable to the researching fields of catalysts for solar batteries, fuel batteries and the like.

Description

technical field [0001] The invention belongs to the technical field of catalytic doping of nanometer materials, and relates to a method for doping graphene with nitrogen by using plasma sputtering technology. Background technique [0002] Graphene is a carbon atom with sp 2 The hybridized orbitals form a hexagonal planar film with a honeycomb lattice, a two-dimensional material with a thickness of only one carbon atom. Graphene has always been considered as a hypothetical structure and cannot exist stably alone. Until 2004, physicists Andre Geim and Konstantin Novoselov of the University of Manchester in the United Kingdom succeeded in experimenting from graphite Graphene was isolated from the experiment, and it was confirmed that it can exist alone. The two also won the 2010 Nobel Prize in Physics for their "pioneering experiments on two-dimensional graphene materials". [0003] Graphene is currently the thinnest but also the hardest nanomaterial in the world. It is almos...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/04C01B32/184
Inventor 董策舟王宏涛李倩倩冯琼周武黄洋
Owner ZHEJIANG UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com