Preparation method of nano porous copper capable of being patterned

A nanoporous copper and patterning technology, which is applied in the field of micromachining, can solve the problems of incompatibility of micromachining technology and difficulty in realizing patterning of nanoporous copper, and achieve the effects of low cost, easy resource and simple process flow

Inactive Publication Date: 2012-11-07
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the precursor alloy used in this invention is obtained by high-temperature melting. This method is also difficult to be compatible with the micromachining process, and it is difficult to realize the patterning of nanoporous copper. Preparation method of porous copper

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] This embodiment one is implemented under the following conditions of implementation and technical requirements:

[0020] (1) On a 3-inch glass sheet, after ultrasonic cleaning and drying, sputter a chrome-copper seed layer, then throw a positive photoresist (model AZ4620), and then perform baking, exposure, and development in sequence, according to The shape of the nanoporous copper array designed by the mask plate realizes the patterning of the photoresist structure of the nanoporous copper square array. The spacing of the square array units is 200um and the side length is 100um;

[0021] (2) On the patterned seed layer, first use electrodeposition technology to deposit the copper stress buffer layer, and the plating solution uses a highly dispersed copper sulfate solution (metal copper ion 0.4mol / L, sulfuric acid 2mol / L, chloride ion 1mmol / L), additives (2-copper tetrahydrothiazole 0.01g / L, sodium polydithiodipropane sulfonate 0.02g / L, polyethylene glycol 0.3g / L). 1...

Embodiment 2

[0024] This embodiment two is implemented under the following conditions of implementation and technical requirements:

[0025] (1) On a 3-inch glass sheet, after ultrasonic cleaning and drying, sputter a chrome-copper seed layer, then throw a positive photoresist (model AZ4620), and then perform baking, exposure, and development in sequence, according to The shape of the nanoporous copper array designed by the mask plate realizes the patterning of the photoresist structure of the nanoporous copper circular array. The spacing of the circular array units is 200um and the diameter is 100um;

[0026] (2) On the patterned seed layer, first use electrodeposition technology to deposit the copper stress buffer layer, and the plating solution uses a highly dispersed copper sulfate solution (metal copper ion 0.4mol / L, sulfuric acid 2mol / L, chloride ion 1mmol / L), additives (2-copper tetrahydrothiazole 0.01g / L, sodium polydithiodipropane sulfonate 0.02g / L, polyethylene glycol 0.3g / L). ...

Embodiment 3

[0029] This embodiment is implemented under the following conditions of implementation and technical requirements:

[0030] (1) On a 3-inch glass sheet, after ultrasonic cleaning and drying, sputter a chrome-copper seed layer, then throw a positive photoresist (model AZ4620), and then perform baking, exposure, and development in sequence, according to The shape of the nanoporous copper array designed by the mask plate realizes the patterning of the photoresist structure of the nanoporous copper ring array. The spacing of the ring array units is 300um, the diameter of the outer ring is 200um, and the diameter of the inner ring is 100um;

[0031] (2) On the patterned seed layer, first use electrodeposition technology to deposit the copper stress buffer layer, and the plating solution uses a highly dispersed copper sulfate solution (metal copper ion 0.4mol / L, sulfuric acid 2mol / L, chloride ion 1mmol / L), additives (2-copper tetrahydrothiazole 0.01g / L, sodium polydithiodipropane s...

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Abstract

The invention discloses a preparation method of nano porous copper capable of being patterned, comprising the following steps: (1), sputtering a Cr-Cu seed layer on a sheet glass, spin coating positive photo-resist, baking the photo-resist, exposing, and developing in turn, so as to pattern the nano porous copper photo-resist; (2), depositing a copper stress buffer layer and a Cu-Zn alloy layer by the electro-deposition technique, to obtain a patterned precursor alloy thin film; and (3), performing de-alloying treatment on the patterned Cu-Zn patterned precursor alloy thin film in an acidic solution, removing the positive photo-resist, finally implementing the patterned nano porous copper so as to obtain a nano porous copper array. The preparation method and the micro-processing technique are compatible; specifically, the nano porous copper arrays with various patterns are obtained by the photo resist patterning technique, the Cu-Zn alloy co-deposition technique, and the de-alloying technique; the preparation method has the advantages of simple process, low cost, easy control, and good compatibility to the micro-processing technique.

Description

technical field [0001] The invention relates to a manufacturing method in the technical field of micromachining, in particular to a method for preparing patternable nanoporous copper. Background technique: [0002] Nanoporous metal is a porous metal material with a pore size on the nanometer scale. Due to its bicontinuous internal structure, high specific surface area and special properties as nanomaterials, it has opened up new applications for metal materials, combining the porous morphology of metal materials with physical properties. , chemical, mechanical properties, etc., go beyond the inherent functions of metals, and give play to the light weight, high strength, strong adsorption, heat insulation, heat dissipation, and excellent energy absorption properties of porous materials, and are widely used in catalysis, chemistry, and biological sensing. , fuel cell electrodes, automobiles, electronics, aerospace and other fields. For example: using the porosity of porous me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/02C25D3/58C25D5/48C23F1/44C22C1/08
Inventor 汪红岳恒杨卓青丁桂甫
Owner SHANGHAI JIAO TONG UNIV
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