BCZN microwave ceramic medium material and preparation method thereof

Abstract

The invention discloses a microwave ceramic medium material and a preparation method thereof, belonging to the technical field of electronic materials. The microwave ceramic medium material comprises a crystalline phase structure and a doping agent, wherein the principal crystalline phase is BCZN(BaCo1 / 3Nb2 / 3O3-BaZn1 / 3Nb2 / 3O3), and the secondary crystalline phase is Ba5Nb4O9 and is generated by following a B: bite and B:: bite atom non-stoichiometric ratio and raw material doping. The principal crystalline phase comprises the following raw materials including BaCO3, Co2O3, ZnO and Nb2O5; and a doping agent comprises Al203 and Ta2O5 which account for 0.1-1.50 percent of crystalline phase structural mass, or comprises CeO2 or Y2O3 which accounts for 0.0-0.5 percent of the crystalline phase structural mass. Due to the adoption of the traditional solid phase sintering method, the microwave ceramic medium material has the characteristics of simpleness, easy control, environment friendliness and low cost; and the obtained microwave ceramic medium material has a high Q*f value (-76500GHz), a medium dielectric constant (35+ / 1) and a frequency temperature coefficient (0+ / -10) close to 0, is suitable for making a microwave device medium material, and can meet the manufacturing requirement of a microwave device.

Description

technical field [0001] The invention belongs to the technical field of electronic information functional materials and devices, in particular to a BCZN microwave ceramic dielectric material with moderate dielectric constant, high quality factor and close to zero frequency temperature coefficient and a preparation method thereof. Background technique [0002] Microwave dielectric materials are widely used in television, radar and other communication fields due to their low loss, high dielectric constant, and low frequency temperature coefficient in the microwave era when communication technology has entered the era of mobility, convenience and miniaturization. The document "Program Outline for Adjustment and Revitalization of Electronic Information Industry" proposes the importance of developing dielectric ceramics with serialized dielectric constant and excellent microwave dielectric properties. High dielectric constant, high quality factor, close to zero frequency temperatu...

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Problems solved by technology

In 1977, Kawashima et al. reported the superiority of BZN as a low-loss microwave dielectric material; in 1987, Cheol-Woo Ahn et al. did a detailed study on the structure and performance of BCN and xBZN-(1-x)BCN systems, pointing out Microwave performance is best when x=0.7: ε r =34.5, Q×f=97000GHz, τ f =0ppm / °C, but this research needs to be annealed under 20°C / min annealing conditions, which are harsh conditions; Paik et al. found in the study of BMN that the deviation of Mg ions will promote the increase of the order and density of BMN, and improve the microwave performance , thus promoting the research on the non-stoichiometric ratio of A-site and B-site atoms in the BCZN system at home and abroad; in 2005, F.Azough et al. found that 0.7BZN-0.3BCN was doped with 0.4wt% CeO 2 It can achieve the excellent performance of Q×f=84000GHz, but it cannot be applied to actual production due to the limitations of ball milling time of 36 hours and molding pressure of 100MPa; in 2006, G.A.Ravi and his collaborators found that Ca 0.7 Ti 0.7 La 0.3 Al 0.3 o 3 Doping a small amount of Al in the ceramic system 2 o 3 Can promote the growth of grains and reduce voids, this method can also be applied to BCZN system ceramics

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