Preparation method of overlong copper nanowire and conductive copper nanowire film

A copper nanowire, ultra-long technology, applied in the field of materials, can solve problems such as difficult dispersion, difficult application, harsh reaction conditions, etc.

Inactive Publication Date: 2012-11-21
SHANGHAI NORMAL UNIVERSITY
View PDF3 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the post-treatment process of copper nanowires synthesized from templates is cumbersome, and it is often necessary to remove the templates with strong acid, strong alkali or other organic solvents.
The direct vapor deposition method is to form gas-phase reactants through various physical or chemical means, and then directly deposit the formed gas-phase reactants on a specific substrate to form a one-dimensional nanowire structure. Although the process is simple, this method needs to be processed under high temperature conditions. conduct
The solution synthesis of copper nanowires usually uses alkali or acid as the reducing agent. The reaction conditions are relatively harsh and difficult to promote. The solvent used is water. The prepared nanowires cluster together and are difficult to disperse. This brings great challenges to its subsequent application. great difficulty

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of overlong copper nanowire and conductive copper nanowire film
  • Preparation method of overlong copper nanowire and conductive copper nanowire film
  • Preparation method of overlong copper nanowire and conductive copper nanowire film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Dissolve 0.5g of hexadecyltrimethylammonium bromide in 8.0g of hexadecylamine completely at 180°C, then add 0.2g of copper acetylacetonate as a copper source; use a Pt-coated silicon wafer as a catalyst, at 140°C The reaction was carried out at high temperature for 10 h, and after cooling to room temperature, the obtained sample was taken out and washed several times with toluene. The obtained brown-red solid was vacuum-dried at 80° C. for 2 hours.

Embodiment 2

[0024] Dissolve 0.5g of hexadecyltrimethylammonium bromide in 8.0g of hexadecylamine completely at 180°C, then add 0.2g of copper acetylacetonate as a copper source, and use a Pt-coated silicon wafer as a catalyst at 150°C The reaction was carried out at high temperature for 10 h, and after cooling to room temperature, the obtained sample was taken out and washed several times with toluene. The obtained brown-red solid was vacuum-dried at 80° C. for 2 hours.

Embodiment 3

[0026] Dissolve 0.5g of hexadecyltrimethylammonium bromide in 8.0g of hexadecylamine completely at 180°C, then add 0.2g of copper acetylacetonate as a copper source, and use a Pt-coated silicon wafer as a catalyst at 160°C Reaction at high temperature for 10h, after cooling to room temperature, the resulting sample was taken out and washed several times with toluene. The obtained brown-red solid was vacuum-dried at 80° C. for 2 hours.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of an overlong copper nanowire. The preparation method comprises steps as follows: (1) dissolving a cationic surfactant into a reducing organic solvent under a condition at 170-190 DEG C to obtain a solution A, wherein the reducing organic solvent is long-chain alkyl amine; (2) dissolving a copper source into the solution A completely, stirring to obtain a solution B; adding noble metal nanoparticles or a silicon sheet plated with the noble metal into the solution B to serve as a catalyst; reacting for 2-20 hours under the condition at 100-200 DEG C; and (3) after cooling the reaction system, taking out the solid and washing the solid by an organic solvent. The diameter of the copper nanowire prepared by the method is about 40-80nm, the length is about 300-1500 mu m; and the copper nanowire is a mono-crystalline copper nanowire grown along the [001] direction. The copper nanowire is proved by XRD (X ray diffraction). The method is simple to operate, the synthesized overlong copper nanowire is of a mono-crystalline structure and is easy to disperse, and a prepared conductive film is excellent in performance.

Description

technical field [0001] The invention relates to the field of materials, and discloses a preparation method of ultra-long copper nanowires. Background technique [0002] In recent years, one-dimensional nanostructures have attracted extensive attention due to their unique optical, electrical, and magnetic properties, especially in the fields of electronics, atom probes, optical devices, transparent conductive materials, and sensors. On the one hand, copper nanowires have high electrical conductivity, and unique mechanical, optical and other physical phenomena will play an extremely important role in future applications; Qingyi. [0003] At present, the methods for synthesizing copper nanowires mainly include template-assisted synthesis, direct vapor deposition, and solution methods. Template-assisted synthesis is a common method for synthesizing copper nanowires due to its simple device, easy operation, and controllable morphology during the synthesis process. However, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/14C30B29/02C30B29/62B22F9/24B05D1/00
Inventor 张蝶青温美成王冉冉孙静章姗姗李贵生李和兴
Owner SHANGHAI NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products