Method of preparing porous graphene film by using electrostatic spray process

A technology of porous graphene and electrostatic spraying, applied in spinning solution preparation, textile and paper making, fiber treatment, etc., can solve the problems of complex process, low yield, expensive equipment, etc.

Inactive Publication Date: 2012-11-21
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the CVD method is also commonly used to prepare graphene films, but this method has...

Method used

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  • Method of preparing porous graphene film by using electrostatic spray process
  • Method of preparing porous graphene film by using electrostatic spray process
  • Method of preparing porous graphene film by using electrostatic spray process

Examples

Experimental program
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Embodiment

[0030] The process and steps of preparing porous graphene film are as follows:

[0031] Soak and clean the silicon wafers containing the surface oxide layer in ethyl acetate and acetone for 30 min, then ultrasonically clean the cleaned silicon wafers in ethanol and distilled water, and finally bake them with an infrared lamp.

[0032] Weigh 2.5 g of graphite powder (99.85%) and place it in a 250ml beaker, add 100ml of 1-methyl-2-pyrrolidone (NMP) to prepare graphite-NMP suspension for later use. Then the above suspension was sealed with multi-layer plastic wrap, and subjected to discontinuous ultrasonic treatment with a low-power ultrasonic cleaner at room temperature for a total of 72 h to obtain a graphene dispersion. Finally, after standing still for 16 h, the dispersion was centrifuged (8000 r / min) for 30 min, and the upper layer liquid was absorbed into a clean glass bottle for later use.

[0033] Pipette 10 ml of graphene dispersion into a 20 ml syringe, fix t...

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Abstract

The invention relates to a method of preparing a porous graphene film on the surface of a silicon wafer by using an electrostatic spray process combined with a heat treatment process of a substrate silicon wafer, and belongs to the technical field of solid film preparation processes. The method is characterized in that graphene dispersion liquid is prepared by a liquid phase ultrasound stripping method, and the graphene dispersion liquid is used as spinning liquid to prepare the porous graphene film on the surface of the substrate silicon wafer by the electrostatic spray process and a substrate heating method. The method is simple and convenient and has low requirements on equipment; and the prepared film has a porous structure, good adhesiveness with the substrate silicon wafer and a larger specific surface area, and is expected to be applied to the fields of gas sensitive sensors, lithium batteries, catalysts and the like.

Description

technical field [0001] The invention relates to the preparation of a porous graphene film on the surface of a substrate silicon chip by using an electrostatic spray process combined with a heat treatment method, and belongs to the technical field of solid film preparation technology. Background technique [0002] Graphene is a carbonaceous material with only a single layer of atomic thickness and a two-dimensional carbon atom crystal with a honeycomb structure. Because of its unique energy band structure and excellent physical properties (electrical, mechanical, optical and thermal conductivity), it has been aroused widespread concern. Graphene has potential applications in fields such as field-effect transistors, light-emitting diodes, sensors, and catalysis. Graphene thin film materials have also become a hot spot of attention, and these thin films also exhibit excellent properties, such as significant electroluminescent properties, excellent photoelectric properties, hig...

Claims

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Application Information

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IPC IPC(8): D04H1/4242D04H1/728D01D5/00D01D1/02
Inventor 赵军陈礼清张兆春杨珊珊郑厚里
Owner SHANGHAI UNIV
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