Manufacturing method of back contact type crystalline silicon solar cell

Abstract

The invention discloses a manufacturing method of a back contact type crystalline silicon solar cell, wherein the manufacturing method comprises the following steps of: tapping and felting the surface of a semiconductor substrate; diffusing on the surface of the felted semiconductor substrate and the inner wall of a through hole; setting block slurry in the through hole of the diffused semiconductor substrate; etching the semiconductor substrate after setting the block slurry; removing the block slurry on the etched semiconductor substrate; removing a doped glass layer on the semiconductor substrate from which the block slurry is removed; and processing the semiconductor substrate from which the doped glass layer is removed so as to obtain the back contact type crystalline silicon solar cell. Before etching, emitter junction in the through hole can be prevented from being etched by setting a block layer in the through hole. Compared with the prior art, the manufacturing method disclosed by the invention is capable of reducing a laser isolation process, the electricity leakage risk of the cell and the fragment rate; furthermore, because the laser isolation process is reduced, the process is simpler; the cost of equipment is reduced; and the manufacturing method is beneficial to large-scale industrial production.

Description

technical field [0001] The present application relates to the technical field of solar cells, in particular to a method for manufacturing back-contact crystalline silicon solar cells. Background technique [0002] A solar cell, also known as a photovoltaic cell, is a semiconductor device that converts the sun's light energy directly into electrical energy. Because it is a green product, does not cause environmental pollution, and is a renewable resource, solar cells are a new energy source with broad development prospects in today's energy shortage situation. At present, more than 80% of solar cells are made of crystalline silicon materials. Therefore, the preparation of high-efficiency crystalline silicon solar cells is of great significance for large-scale utilization of solar power generation. The main grid line, the positive electrode and the negative electrode are all located on the backlight side of the cell, which greatly reduces the shading rate of the light-receivi...

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Problems solved by technology

[0013] In the existing manufacturing process, in the diffusion junction step, a conductive layer that short-circuits the P-N junction will be formed between the backlight surface of the solar cell and the conductive hole, which greatly reduces the parallel resistance of the cell and is prone to leakage, so The conductive layer between the P-N junction needs to be removed by laser isolation step

However, the use of laser isolation may cause new leakage paths in solar cells, resulting in a decrease in the performance of the cells. In addition, the laser damages the cells themselves, and debris may appear during the laser isolation process, which increases the production of cells. cost

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