Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method

Abstract

The invention discloses a silicon wafer drying furnace capable of preventing metal ion pollution and a silicon wafer drying method. The drying furnace comprises a furnace body, a heating device, a silicon wafer conveying device and a control unit, wherein the heating device is arranged in the furnace body; the inner wall of the furnace body is made of a quartz plate; the heating device comprises a quartz tube far infrared heating lamp; the silicon wafer conveying device comprises a plurality of horizontal silicon wafer tracks and corresponding conveying mechanisms; the conveying mechanisms are reciprocating type stepping mechanisms; and a hearth is also filled with protective gas. All parts, which are in contact with silicon wafers, in the drying furnace are made of a quartz material, the silicon wafers are prevented from being in contact with metal parts, the reciprocating type stepping mechanisms solve problems that a common chain type metal wire belt easily causes metal ion pollution or a resin wire belt is aged quickly at high temperature, the silicon wafers are always protected by high-purity nitrogen in a drying process, and the drying quality of the silicon wafers is improved.

Description

[0001] technical field [0002] The invention relates to a solar cell production equipment, in particular to a silicon wafer drying furnace and a silicon wafer drying method capable of preventing metal ion pollution. [0003] Background technique [0004] The conversion efficiency of current solar cells continues to increase. In the production process of solar cells, the selective diffusion process has become a key research and development field for battery manufacturers. In various process routes to achieve selective diffusion, the primary diffusion method of printing phosphorus sources is used. Low cost and easy mass production have attracted the most attention. The printed silicon wafers need to be dried in a drying furnace. The Chinese patent number is ZL200620073300.3, which is a utility model patent named solar cell substrate drying furnace. Provided is a solar cell substrate drying furnace, which is used to discharge the colloid and moisture of the electrode paste on...

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Problems solved by technology

[0005] The invention mainly solves the technical problems that the ordinary silicon chip drying furnace cannot eliminate the secondary pollution of the silicon chip by metal ions, the energy consumption of the drying furnace is large, and the resin mesh belt is easy to age, and provides a method that can prevent metal ion pollution and save energy Silicon wafer drying furnace and silicon wafer drying method

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