Method for manufacturing coaxial silicon carbide/silicon dioxide nanocable with chemical vapor deposition method

A technology of chemical vapor deposition and silicon dioxide, applied in gaseous chemical plating, cable/conductor manufacturing, circuit, etc., can solve problems such as difficult control, complex process, poor product purity and uniformity, and reduce production cost , simple synthesis process and low equipment requirements

Active Publication Date: 2014-07-02
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The two methods described above are more complex and difficult to control. More importantly, the purity and uniformity of the product are not good. Therefore, a simple process is required, which is easy to control, and the product is pure and uniform to prepare silicon carbide / silicon dioxide. (Inner Core / Outer Layer) Coaxial Nanocable Approach

Method used

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  • Method for manufacturing coaxial silicon carbide/silicon dioxide nanocable with chemical vapor deposition method
  • Method for manufacturing coaxial silicon carbide/silicon dioxide nanocable with chemical vapor deposition method
  • Method for manufacturing coaxial silicon carbide/silicon dioxide nanocable with chemical vapor deposition method

Examples

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example 1

[0026] Make the density about 1.70g / cm 3 The carbon / carbon composite material is processed into 20×10×5mm 3 The sample was polished with No. 800 and No. 1000 sandpaper in turn, then ultrasonically cleaned with distilled water, dried in an oven at 120°C, and soaked in a 50% nickel nitrate aqueous solution until there were no air bubbles on the surface of the sample. The sample was then dried in an oven at 80°C as a deposition substrate.

[0027] The soaked carbon / carbon composite material is bound with a bundle of carbon fibers and hung in the deposition area of ​​a vertical chemical vapor deposition furnace. Vacuum the deposition furnace to 2000 Pa, keep the vacuum for 30 minutes to confirm that the sealing performance of the deposition furnace is intact, and then pass argon gas to normal pressure, and repeat this process three times. Then, the temperature of the deposition furnace was raised to 1100 °C at a rate of 10 °C / min. During the heating process, argon gas was flowed...

example 2

[0030] Make the density about 1.70g / cm 3 The carbon / carbon composite material is processed into 20×10×5mm 3 The sample was polished with No. 800 and No. 1000 sandpaper in turn, then ultrasonically cleaned with distilled water, dried in an oven at 120°C, and soaked in a 50% nickel nitrate aqueous solution until there were no air bubbles on the surface of the sample. The sample was then dried in an oven at 80°C as a deposition substrate.

[0031] The soaked carbon / carbon composite material is bound with a bundle of carbon fibers and hung in the deposition area of ​​a vertical chemical vapor deposition furnace. Vacuum the deposition furnace to 2000 Pa, keep the vacuum for 30 minutes to confirm that the sealing performance of the deposition furnace is intact, and then pass argon gas to normal pressure, and repeat this process three times. Then the deposition furnace was heated up to 1300°C at a rate of 10°C / min. During the heating process, argon gas was flowed into the depositio...

example 3

[0034] Make the density about 1.70g / cm 3 The carbon / carbon composite material is processed into 20×10×5mm 3 The sample was polished with No. 800 and No. 1000 sandpaper in turn, and then ultrasonically washed with distilled water. After drying in an oven at 120°C, it was soaked in a nickel nitrate aqueous solution with a mass percentage of 15% until there were no air bubbles on the surface of the sample. The sample was then dried in an oven at 80°C as a deposition substrate.

[0035] The soaked carbon / carbon composite material is bound with a bundle of carbon fibers and hung in the deposition area of ​​a vertical chemical vapor deposition furnace. Vacuum the deposition furnace to 2000 Pa, keep the vacuum for 30 minutes to confirm that the sealing performance of the deposition furnace is intact, and then pass argon gas to normal pressure, and repeat this process three times. Then, the temperature of the deposition furnace was raised to 1100 °C at a rate of 10 °C / min. During th...

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Abstract

The invention relates to a method for manufacturing a coaxial silicon carbide / silicon dioxide nanocable with a chemical vapor deposition method. The method comprises the following steps of: putting a soaked carbon / carbon compound material into a deposition furnace; vacuumizing and introducing argon till the normal pressure is reached; introducing hydrogen gas serving as carrier gas into a bubbling bottle loaded with methyl trichlorosilane; introducing methyl trichlorosilane serving as a reaction gas resource into a hearth; and meanwhile, introducing diluted argon and diluted hydrogen for reacting. The method has a simple synthesizing process, and a pre-synthesizing process is not required; the silicon carbide / silicon dioxide (inner core / outer layer) coaxial nanocable is manufactured under the normal pressure, and the requirement on equipment is low; the deposition temperature is low, and the manufacturing cost is lowered; and moreover, the method has another outstanding characteristic that the purity and uniformity of the silicon carbide / silicon dioxide (inner core / outer layer) coaxial nanocable can be effectively controlled by adjusting deposition process parameters. According to the advantages, large-scale industrial production of the silicon carbide / silicon dioxide (inner core / outer layer) coaxial nanocable becomes possible.

Description

technical field [0001] The invention relates to the field of preparation methods of coaxial nano cables, in particular to a method for preparing coaxial silicon carbide / silicon dioxide nano cables by chemical vapor deposition. Background technique [0002] Coaxial nanocables refer to nanowires whose core is a semiconductor, and which are covered with heterogeneous nanoshells (conductors or insulators), and the outer shell and core are coaxial. Composed of crystalline SiC core and amorphous SiO 2 The silicon carbide / silicon dioxide (core / outer layer) coaxial nanocable composed of the outer shell not only has a dual structure of nanowires and nanotubes in the axial direction, but also has an ideal semiconductor-insulator heterostructure in the radial direction, so the carbonization Silicon / silica (core / outer) coaxial nanocables have great potential for many applications. There are many methods for the synthesis of SiC / SiO2 (core / outer) coaxial nanocables, including silica ge...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00C23C16/44C23C16/52
Inventor 李贺军强新发张雨雷李克智魏建锋
Owner NORTHWESTERN POLYTECHNICAL UNIV
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