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Gallium nitride (GaN) base enhancement device containing ferroelectric layer and preparation method thereof

An enhanced ferroelectric layer technology, applied in the field of microelectronics, can solve the problems of device performance degradation, output current and transconductance reduction, preparation process incompatibility, etc., and achieve the effect of performance improvement

Inactive Publication Date: 2015-07-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But at the same time, after completing the LiNbO 3 After the thin film is deposited, the incompatibility of the preparation process and the large difference in the lattice structure of the two types of materials will lead to a significant decrease in the performance of the device, such as a greatly reduced output current and transconductance.

Method used

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  • Gallium nitride (GaN) base enhancement device containing ferroelectric layer and preparation method thereof
  • Gallium nitride (GaN) base enhancement device containing ferroelectric layer and preparation method thereof
  • Gallium nitride (GaN) base enhancement device containing ferroelectric layer and preparation method thereof

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Effect test

Embodiment 1

[0034] GaN-based enhancement-mode devices with ferroelectric layers, including AlGaN / GaN / Al 2 o 3 A semiconductor heterostructure substrate on which a ZnO buffer layer and epitaxial LiNbO 3 type ferroelectric thin film layer, ZnO buffer layer is set on the substrate and epitaxial LiNbO 3 Type ferroelectric thin film layer; AlGaN with Al x Ga 1-x N means, x is the molar content of Al, x=1. GaN or AlGaN is oriented along the (0001) direction.

[0035] The material of the ZnO buffer layer is ZnO doped with Al element.

[0036] Epitaxial LiNbO 3 The material of the ferroelectric thin film layer is Mg-doped LiNbO 3 .

Embodiment 2

[0038] GaN-based enhancement-mode devices with ferroelectric layers, including AlGaN / GaN / Al 2 o 3 A semiconductor heterostructure substrate on which a ZnO buffer layer and epitaxial LiNbO 3 type ferroelectric thin film layer, ZnO buffer layer is set on the substrate and epitaxial LiNbO 3 Type ferroelectric thin film layer; AlGaN with Al x Ga 1-xN means, x is the molar content of Al, x=0.5. GaN or AlGaN is oriented along the (0001) direction.

[0039] The material of the ZnO buffer layer is ZnO.

[0040] Epitaxial LiNbO 3 The material of the ferroelectric thin film layer is LiNbO 3 .

Embodiment approach

[0041] see Figure 5 , the embodiment of the preparation process of the present invention is as follows:

[0042] (1) Using BCl 3 / Cl 2 Plasma etching technology performs mesa etching on AlGaN / GaN thin film substrates. Then, ohmic electrodes were prepared in the source and drain regions by electron beam evaporation process;

[0043] (2) Covering the gate region with photoresist through photolithography technology. At this time, the grid length is d 1 . Then, deposit the first mask layer on the surface of the substrate; the material of the mask layer is Si 3 N 4 or SiO 2 , deposited at room temperature, its thickness depends on the thickness of the ferroelectric layer, generally controlled between 200~300nm.

[0044] (3) Removing the cover layer of the gate region, including the photoresist and the first layer of mask layer material covered thereon;

[0045] (4) Through photolithography again, the gate region formed in the previous step is covered with photoresist. A...

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Abstract

A gallium nitride (GaN) base enhancement device containing a ferroelectric layer relates to the technical field of micro-electronics. The GaN base enhancement device comprises an AlGaN / GaN / AI2O3 semiconductor heterostructure substrate, a ZnO buffer layer and an extension LiNbO3 type ferroelectric film layer are arranged on the substrate, and the ZnO buffer layer is arranged between the substrate and the extension LiNbO3 type ferroelectric film layer. The AlGaN is shown by AlxGal-xN, the x is mole content of Al, and 0<x<=1. The GaN base enhancement device introduces the ZnO buffer layer, performance of a prepared enhancement field-effect tube device is greatly improved, specific representations are that Ids is increased from 97mA / mm to 203Ma / mm, and Gm is increased from 27Ms / mm to 46mS / mm. The GaN base enhancement device provides a good material system design scheme and a device structure for novel GaN type semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to the preparation technology of ferroelectric functional film materials and semiconductor devices. Specifically, it is a realization method of a new enhanced AlGaN / GaN field effect transistor device, which can be used to develop new high-temperature, high-frequency and high-power semiconductor electronic devices. Background technique [0002] Based on its own strong piezoelectric polarization and spontaneous polarization effects, in the case of non-intentional doping, AlGaN / GaN heterostructures can form concentrations as high as 10 13 cm -2 Two-dimensional electron gas (2DEG). Therefore, GaN-based materials have extremely broad application prospects in the fields of high-power density, high-frequency, and high-speed electronic devices. [0003] Usually, the prepared AlGaN / GaN field effect transistor devices exhibit the characteristics of normally-on, that is, depletion-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/778H01L21/335
Inventor 朱俊郝兰众吴志鹏李言荣张万里
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA