Middle/high-temperature infrared emissivity testing device

A technology of infrared emissivity and testing device, which can be used in measurement devices, material analysis by optical means, instruments, etc., and can solve the problems of high cost and complex structure.

Active Publication Date: 2012-12-19
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the simultaneous use of HgCdTe photovoltaic and silicon photodiode detectors, spectral emissivity measurements in the temperature range of 60°C to 1500°C and in the spectral range of 0.6μm to 25μm can be achieved, a...

Method used

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  • Middle/high-temperature infrared emissivity testing device
  • Middle/high-temperature infrared emissivity testing device
  • Middle/high-temperature infrared emissivity testing device

Examples

Experimental program
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Embodiment 1

[0059] Such as figure 1 and figure 2 As shown, the medium and high temperature infrared emissivity testing device of the present invention includes a mid-infrared reflectivity testing system, a sample heating control system and a microcomputer data processing system.

[0060] The mid-infrared reflectance test system is mainly used to measure the reflectance of the sample surface, including infrared light source, interferometer, mid-infrared integrating sphere, infrared detector, A / D converter and liquid nitrogen cooling device for cooling the infrared detector .

[0061] The sample heating control system is used to heat the sample and control the temperature of the sample, including the sample heating table 6 and the communication converter 2, temperature controller 3, thyristor voltage regulator 4, sample heater 7 and indicator light 8 connected in sequence, the temperature The controller 3 is connected with a precision thermocouple 5, and the precision thermocouple 5 is c...

Embodiment 2

[0089] Infrared emissivity test of a coated Cu sheet sample with a thickness of 0.2mm and an area of ​​40mm×40mm at 200°C.

[0090] The first step is the assembly of the medium and high temperature infrared emissivity test device

[0091] According to Example 1 Figure 1-Figure 8 Install and connect all of the components to form a medium-high temperature infrared emissivity test device for use in the following steps;

[0092] The use of the high temperature infrared emissivity test device in the second step

[0093] 1) Turn on the computer data processing system, and use the mid-infrared reflectance test system to measure the reference sample (such as gold-plated standard sheet) at a certain temperature T 0 (such as room temperature) reflectivity R 0 (λ, T 0 ), as the background noise reference value of the environment;

[0094] 2) Put the sample to be tested on the sample heating table and fix it, align it with the test hole of the integrating sphere, and set the measure...

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Abstract

The invention discloses a middle/high-temperature infrared emissivity testing device. The middle/high-temperature infrared emissivity testing device comprises an infrared reflectivity testing system, a sample heating control system and a microcomputer data processing system. The infrared reflectivity testing system comprises an infrared source, an interferometer, an intermediate infrared integrating sphere, an infrared detector, an A/D convertor and a liquid nitrogen cooling device. The sample heating control system comprises a sample heating table, a communication convertor, a temperature controller, a silicon-controlled voltage regulator, a sample heater and an indicator light, wherein the communication convertor, the temperature controller, the silicon-controlled voltage regulator, the sample heater and the indicator light are orderly connected. The temperature controller is connected to a precision thermocouple. The microcomputer data processing system is used for inputting preset parameters and acquiring and treating data. The middle/high-temperature infrared emissivity testing device is simple, can be used conveniently, can realize fast and accurate measurement of infrared emissivity of a material in a middle/high-temperature range of 20 to 600 DEG C, and can be used for the field of key development of middle/high-temperature solar photo-thermal coatings.

Description

technical field [0001] The invention relates to the technical field of emissivity measurement, in particular to a medium-high temperature infrared emissivity testing device. Background technique [0002] Emissivity is an important parameter to describe the thermal radiation characteristics of an object, and it is of great value in the fields of aerospace, national defense science, and industrial and agricultural production. In the past, emissivity measurement mostly used methods such as calorimetry, reflectometer method, radiant energy method and multi-wavelength measurement method. In its test method, the device calculates the infrared emissivity of the sample to be tested by heating the sample to be tested and the reference sample with the same power, and by referring to the infrared emissivity value of the sample and the measured value of the surface temperature of the sample. However, these methods more or less have problems such as low measurement accuracy (>5%), na...

Claims

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Application Information

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IPC IPC(8): G01N21/00G01N25/00
Inventor 刘志敏曹鸿涛梁凌燕张公军许高杰李勇卢焕明
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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