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Al-Ge-Te phase-change material for phase change memory

A technology of phase change memory and phase change material, applied in electrical components and other directions to achieve the effect of reducing current, reducing power consumption and long cycle life

Inactive Publication Date: 2012-12-19
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the resistivity of GeTe crystallization is lower than that of GeSbTe material, GeTe-based phase-change memory requires higher current for writing than GeSbTe-based phase-change memory.

Method used

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  • Al-Ge-Te phase-change material for phase change memory
  • Al-Ge-Te phase-change material for phase change memory
  • Al-Ge-Te phase-change material for phase change memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] preparation Al 300 23 Ge 1000 23 Te 1000 23 :

[0048] The sputtering coating method in the physical vapor deposition method (PVD) is selected, and Al, Ge, and Te single-substance targets are respectively prepared on the silicon substrate by the magnetron co-sputtering process, including the following steps:

[0049] (1) Put the cleaned and dried substrate into the vacuum sputtering chamber with a vacuum degree of 1×10 -4 At the time of Pa, the gas Ar that passes through is glowing, and the glowing flow rate is 200sccm.

[0050] (2) Rotate the sample stage loaded with the substrate, turn on the sputtering power supply, adjust the Ar flow rate to the sputtering state, and the flow rate is 50 sccm.

[0051] (3) After the deposition is completed, turn off the power...

Embodiment 2

[0057] preparation Al 300 23 Ge 1000 23 Te 1000 23 :

[0058] The preparation of aluminum-germanium-tellurium phase-change thin film material by chemical vapor deposition method comprises the following steps:

[0059] (1) Place the cleaned and dried substrate in the middle of a clean quartz tube, put the quartz tube into the electric furnace so that the middle of the quartz tube is located in the central area of ​​the electric furnace, and then inject 100 sccm of hydrogen and 100 sccm of hydrogen into the quartz tube The mixed gas of argon is used as the carrier gas, and the heating starts after 60 minutes of ventilating;

[0060] (2) When the temperature in the central area of ​​the electric furnace reaches the deposition temperature, the raw materials of Ge, Te and Al...

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Abstract

The invention relates to an Al-Ge-Te phase-change material for a phase change memory, which has a chemical formula of Al(100-x-y)GexTey, wherein x plus y is less than 100 but is more than 50, and x divided by y is less than 4 but is more than 0.25. The Al-Ge-Te phase-change material is used as a storage medium in the phase change memory, and the conversion of high and low resistances can be realized under the action of electric signals. Electric signals act on the phase change memory based on the Al-Ge-Te phase-change material, so the low resistance value is larger than the low resistance value of a device based on the conventional Ge-Te phase-change material, so the low power consumption requirement is satisfied. Moreover, the Al-Ge-Te phase-change memory maintains the normal high and low resistance difference after being circularly erased for 103 times, so the circulation service life of the device is long.

Description

technical field [0001] The invention relates to an Al-Ge-Te phase-change material used for a phase-change memory, and belongs to the field of semiconductor material manufacturing. Background technique [0002] Memory is an important part of the current semiconductor market and the cornerstone of information technology, playing an important role in both life and the national economy. At present, memory storage products mainly include: flash memory, disk, dynamic memory, static memory, etc. Other non-volatile technologies: ferroelectric RAM, magnetic RAM, carbon nanotube RAM, resistive RAM, copper RAM (Copper Bridge), holographic storage, single electron storage, molecular storage, polymer storage, racetrack memory (Racetrack Memory) ), probe memory (Probe Memory), etc. as candidates for next-generation memory have also been extensively studied. Each of these technologies has its own characteristics, but most of them are still in the stage of theoretical research or prelimin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 任堃饶峰宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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