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Method for improving surface passivation of solar cell

A solar cell and tubular technology, which is applied in the direction of circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of low production efficiency and high cost, improve the lifetime of minority carriers, and the method is simple and easy to operate, reducing dangling bonds and crystals The effect of defects

Active Publication Date: 2013-01-02
ZHEJIANG FORTUNE ENERGY
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Problems solved by technology

Therefore, in the actual production process, it will bring unfavorable factors such as low production efficiency and high cost

Method used

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  • Method for improving surface passivation of solar cell
  • Method for improving surface passivation of solar cell

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specific Embodiment approach

[0011] A method for improving the surface passivation of solar cells provided by the present invention will be further described in the following specific embodiments. This embodiment is carried out under the same conditions as the original process in the processes of texturing, diffusion, etching, PECVD, and screen printing. The specific implementation is as follows:

[0012] (1) Place the cleaned and textured polysilicon wafer in a graphite boat and put it into a tubular PECVD device for hydrogen ion passivation.

[0013] (2) During the passivation process, tubular PECVD does not need to feed silane, and only ammonia gas is fed under the action of plasma. The passivation parameters are power 5000W, temperature 450°C, pressure 1700 mTorr, ammonia gas flow rate 7slm, accounting for The empty ratio is 5:50, and the processing time is 15 minutes.

[0014] (3) The hydrogen-passivated silicon wafers are sequentially diffused, etched, PECVD, screen-printed, sintered, and sorted t...

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Abstract

The invention discloses a method for improving surface passivation of a solar cell. The method includes steps of A, placing a silicon wafer in acidic or alkaline solution with certain concentration to perform cleaning and surface texture making treatment; B, placing the silicon wafer after surface texture making treatment into a graphite boat, and placing the graphite boat with the silicon wafer into tubular PECVD (plasma enhanced chemical vapor deposition) equipment to perform hydrogen ion passivation; C, only filling a certain flow of ammonia into the tubular PECVD equipment under the action of plasmas to carry out a passivation process. The passivation process can be carried out without filling silane into the tubular PECVD equipment. The method has the advantages that the minority carrier lifetime of the silicon wafer is prolonged by the passivation action of hydrogen ions, dangling bonds and crystal defects on surfaces of the silicon wafer are reduced, passivation process time is short, the method is simple and is easy to implement, and the purpose of improving photovoltaic conversion efficiency of the solar cell is achieved.

Description

technical field [0001] The invention relates to the technical field of making solar cells, in particular to a method for improving the surface passivation of solar cells. Background technique [0002] There are two main factors that affect the minority carrier life of crystalline silicon cells: one is metal ion contamination, and the other is silicon dangling bonds and internal defects. Metal ion contamination is mainly related to the purification of silicon materials and silicon wafer cutting technology, while the dangling bonds and internal defects of silicon wafers are related to the purity and doping of silicon materials. In the production process of solar cells, the higher the minority carrier lifetime, the higher the corresponding photoelectric conversion efficiency. Generally, the minority carrier lifetime of single crystal is required to exceed 10us, and the minority carrier lifetime of polycrystal exceeds 2us. The efficiency of the cells prepared in this way is rela...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 徐杰
Owner ZHEJIANG FORTUNE ENERGY
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