Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of high dielectric constant gate dielectric lanthanum titanium oxide amorphous film

An amorphous film and gate dielectric technology, applied in the field of functional ceramics, can solve the problems of high leakage current density of lanthanum titanium oxide amorphous film, and achieve the effect of high dielectric constant and low leakage current density

Inactive Publication Date: 2013-01-09
NORTHWESTERN POLYTECHNICAL UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the shortcomings of the large leakage current density of the lanthanum titanate amorphous film prepared by the existing method, the present invention provides a method for preparing a high dielectric gate dielectric lanthanum titanate amorphous film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of high dielectric constant gate dielectric lanthanum titanium oxide amorphous film
  • Preparation method of high dielectric constant gate dielectric lanthanum titanium oxide amorphous film
  • Preparation method of high dielectric constant gate dielectric lanthanum titanium oxide amorphous film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Embodiment 1, weighing purity is 99.99% LaTiO 3.5 particles as film material, LaTiO 3.5 The particle size is 2-3mm. A p-type Si (100) with a diameter of 75mm is used as a substrate, its resistivity is 2-10Ω·cm, and its thickness is 0.5mm. After the substrate is thoroughly cleaned, it is quickly placed in a vacuum chamber, and the substrate is heated with a heating system to keep its temperature at 100°C. The background vacuum before evaporation is less than 3×10 -3 Pa, during the evaporation process, in order to obtain a higher oxygen content, use O with a purity of 99.99% 2 as a reactive gas. The evaporation time was 6 minutes, and the beam current of the electron gun was 70mA to obtain a lanthanum titanyl oxide amorphous film in a deposited state. The as-deposited film was rapidly annealed at 700°C for 5 minutes to obtain an amorphous film of lanthanum titanyl oxide.

[0021] The phase structure of the film was analyzed by XRD; the composition of the film was an...

Embodiment 2

[0022] Embodiment 2, weighing purity is 99.99% LaTiO 3.5 particles as film material, LaTiO 3.5 The particle size is 2-3mm. A p-type Si (100) with a diameter of 75mm is used as a substrate, its resistivity is 2-10Ω·cm, and its thickness is 0.5mm. After the substrate is thoroughly cleaned, it is quickly placed in a vacuum chamber, and the substrate is heated with a heating system to keep its temperature at 150°C. The background vacuum before evaporation is less than 3×10 -3 Pa, during the evaporation process, in order to obtain a higher oxygen content, use O with a purity of 99.99% 2 as a reactive gas. The evaporation time was 4 minutes, and the beam current of the electron gun was 80mA to obtain a lanthanum titanyl oxide amorphous film in a deposited state. The as-deposited film was rapidly annealed at 750°C for 4 minutes to obtain an amorphous film of lanthanum titanyl oxide.

[0023] The phase structure and morphology of the film were analyzed by XRD and SEM; the compos...

Embodiment 3

[0024] Embodiment 3, weighing purity is 99.99% LaTiO 3.5 particles as film material, LaTiO 3.5 The particle size is 2-3mm. A p-type Si (100) with a diameter of 75mm is used as a substrate, its resistivity is 2-10Ω·cm, and its thickness is 0.5mm. After the substrate is thoroughly cleaned, it is quickly placed in a vacuum chamber, and the substrate is heated with a heating system to keep its temperature at 200°C. The background vacuum before evaporation is less than 3×10 -3 Pa, during the evaporation process, in order to obtain a higher oxygen content, use O with a purity of 99.99% 2 as a reactive gas. The evaporation time was 2 min, and the beam current of the electron gun was 85 mA to obtain a deposited amorphous lanthanum titanyl film. The as-deposited film was rapidly annealed at 800°C for 2 minutes to obtain an amorphous film of lanthanum titanyl oxide.

[0025] The phase structure and morphology of the film were analyzed by XRD and SEM; the composition of the film wa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Leakage current densityaaaaaaaaaa
Leakage current densityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a high dielectric constant gate dielectric lanthanum titanium oxide amorphous film, for solving the technical problem that the leakage current density of the lanthanum titanium oxide amorphous film prepared by the existing method is high. According to the technical scheme, LaTiO3.5 particles are used as the coating material for evaporation, p-type Si(100) is used as a substrate; after the substrate is washed, a heating system is used to heat and evaporate the substrate in a vacuum chamber, wherein the temperature is kept at 100-250 DEG C, the evaporation time is 1-6min, the electronic gun beam is 70-90mA, the vacuum degree of the vacuum chamber is less than 3*10<-3>Pa, and O2 of which the purity is 99.99% is used as a reaction gas in the evaporation process; a deposited lanthanum titanium oxide amorphous film is obtained; and rapid annealing is performed on the deposited lanthanum titanium oxide amorphous film at 700-900 DEG C for 1-5min to obtain the lanthanum titanium oxide amorphous film. By optimizing the formula and technology of the lanthanum titanium oxide amorphous film, the lanthanum titanium oxide amorphous film with low leakage current density and high dielectric constant is obtained. The prepared lanthanum titanium oxide amorphous film has low leakage current density which is reduced from 10<-6>A / cm<2> in the background technology to 6.5*10<-7>A / cm<2>.

Description

technical field [0001] The invention belongs to the field of functional ceramics, and relates to a preparation method of a lanthanum titanyl oxide amorphous film, in particular to a preparation method of a high dielectric gate dielectric lanthanum titanyl oxide amorphous film. Background technique [0002] With the wide application of integrated components in microelectronics technology, there is an urgent need for a functional material with moderate dielectric constant at room temperature, low leakage current, high breakdown voltage and small equivalent gate oxide thickness. , lanthanum titanium oxide amorphous thin film is considered as a promising candidate material. At present, the high-k gate insulating dielectric materials that have been researched more at home and abroad are mainly metal oxides, such as TiO 2 , ZrO 2 , HfO 2 , Er 2 o 3 , Ta 2 o 5 , Y 2 o 3 , Al 2 o 3 , Gd 2 o 3 , La 2 o 3 and silicates (M-Si-O, M=Zr, Hf, La, Gd, etc., aluminates (M-Al-O...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/06C23C14/24C23C14/58C23C14/54
Inventor 樊慧庆杨陈李强
Owner NORTHWESTERN POLYTECHNICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com