Method for preparing Fe film with pyramid structure

A technology of pyramid structure and thin film, applied in metal material coating process, ion implantation plating, coating and other directions, to achieve the effect of low cost, complete crystallization and easy realization

Inactive Publication Date: 2013-01-09
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, people use single crystal silicon as the growth substrate, and the surface morphology of the prepared Fe thin film is a granular structure. The use of magnetron sputtering to prepare Fe thin films with a pyramidal surface morphology has not been reported.

Method used

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  • Method for preparing Fe film with pyramid structure
  • Method for preparing Fe film with pyramid structure
  • Method for preparing Fe film with pyramid structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] This embodiment includes the following steps:

[0028] Step (1): target selection

[0029] Select a high-purity metal iron target (purity 99.99%) as the sputtering target, and put the target into the magnetron sputtering chamber;

[0030] Step (2): Substrate Processing

[0031] A single crystal silicon wafer with a single-sided polished (100) crystal surface is selected as the growth substrate; the single crystal silicon substrate is ultrasonically cleaned with acetone, alcohol and deionized water in sequence, and the processed single crystal silicon substrate is placed in Magnetron sputtering room sample table;

[0032] Step (3): Preparation of Fe thin film

[0033] Pyramid structure Fe film is prepared by sputtering; the vacuum degree of the magnetron sputtering chamber is less than or equal to 3×10 -4 Pa, the working gas is argon with a purity of 99.999%, the sputtering pressure is 2.0Pa, the argon flow rate is 20sccm, the excitation current is 3.5A, the sputteri...

Embodiment 2

[0035] This embodiment includes the following steps:

[0036] Step (1): target selection

[0037] Select a high-purity metal iron target (purity 99.99%) as the sputtering target, and put the target into the magnetron sputtering chamber;

[0038] Step (2): Substrate Processing

[0039] A single-crystal silicon wafer with a single-sided polished (100) crystal plane is selected as the growth substrate. The single crystal silicon substrate is ultrasonically cleaned with acetone, alcohol and deionized water in sequence, and the processed single crystal silicon substrate is placed on the sample stage of the magnetron sputtering chamber;

[0040] Step (3): Preparation of Fe thin film

[0041] Pyramid structure Fe films were prepared by sputtering. The vacuum degree of the magnetron sputtering chamber is less than or equal to 3×10 -4 Pa, the working gas is argon with a purity of 99.999%, the sputtering pressure is 2.0Pa, the argon flow rate is 20sccm, the excitation current is 3....

Embodiment 3

[0043] This embodiment includes the following steps:

[0044] Step (1): target selection

[0045] Select a high-purity metal iron target (purity 99.99%) as the sputtering target, and put the target into the magnetron sputtering chamber;

[0046] Step (2): Substrate Processing

[0047] A single-crystal silicon wafer with a single-sided polished (100) crystal plane is selected as the growth substrate. The single crystal silicon substrate is ultrasonically cleaned with acetone, alcohol and deionized water in sequence, and the processed single crystal silicon substrate is placed on the sample stage of the magnetron sputtering chamber;

[0048] Step (3): Preparation of Fe thin film

[0049] Pyramid structure Fe films were prepared by sputtering. The vacuum degree of the magnetron sputtering chamber is less than or equal to 3×10 -4Pa, the working gas is argon with a purity of 99.999%, the sputtering pressure is 2.0Pa, the argon flow rate is 20sccm, the excitation current is 3.5...

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Abstract

The invention discloses a method for preparing a Fe film with a pyramid structure. The method comprises the steps of (1) selecting high-purity metallic iron target (the purity is 99.99%) as a sputtering target material and placing the target material into a magnetron sputtering chamber; (2) sequentially using acetone, alcohol and deionized water to perform ultrasonic cleaning to a monocrystalline silicon substrate and placing the processed monocrystalline silicon substrate into a magnetron sputtering chamber sample table; and (3) using argon gas as working gas as, adjusting sputtering pressure, exciting current, sputtering current and rotary rate of the sample table and performing sputtering for certain time to prepare the Fe film. Under the condition that direct current bias voltage is not exerted, the Fe film with the pyramid structure is prepared on the monocrystalline silicon substrate by appropriately controlling the sputtering pressure, the exciting current, the sputtering current and the like. The Fe film with the pyramid structure prepared on the monocrystalline silicon substrate is simple in preparation process and has wide industrialization prospect.

Description

technical field [0001] The invention relates to an iron thin film material, which belongs to the two technical fields of metal thin film growth and magnetron sputtering, in particular to a method for growing a pyramid-structured Fe thin film in a large area by using a magnetron sputtering method. Background technique [0002] Nanostructured Fe thin films, as a new type of material, have been widely used in many fields. For example, in the field of information storage technology, it can be used as a high-density magnetic recording medium and a nanometer thin film probe, and can also be used as a substrate for making other nanomaterials such as carbon nanotube growth substrates. In addition, the application of Fe thin films grown on semiconductor or insulator substrates in novel heterostructure semiconductor devices has attracted widespread attention. Different application fields have different requirements on the morphology, structure and performance of the thin film. For ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/35
Inventor 陈敏陈弟虎何振辉莫康信
Owner SUN YAT SEN UNIV
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