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Cobaltosic oxide micro-nano composite structure array and manufacturing method thereof

A technology of tricobalt tetroxide and tricobalt tetroxide bowl, which is applied in the field of cobalt trioxide micro-nano composite structure array and its preparation, can solve the problems of not being able to produce the final product, unfavorable application, etc., and achieve high production efficiency, reduce coupling effect, and use less materials Effect

Inactive Publication Date: 2013-01-16
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, both the bowl-shaped array film and its preparation method have shortcomings. First, the microstructure that constitutes the final product—the bowl-shaped array units are connected to each other, that is, the arrangement is closely arranged. The complex coupling between units is formed, such as magnetic coupling, which makes it extremely unfavorable for applications in some aspects; secondly, the microstructure of the final product is only bowl-shaped, rather than optical, magnetic and electrochemical Hollow spheres with important structural correlation effects in devices and other aspects; again, the preparation method cannot produce a final product with non-close contact between microstructure units

Method used

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  • Cobaltosic oxide micro-nano composite structure array and manufacturing method thereof
  • Cobaltosic oxide micro-nano composite structure array and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0026] The concrete steps of preparation are:

[0027] Step 1, first place a single-layer colloidal crystal template composed of polystyrene colloidal spheres with a diameter of 2 μm on a conductive substrate; wherein the conductive substrate is conductive glass. Then place the conductive substrate with a single-layer colloidal crystal template on it in a plasma etching machine and use plasma to etch it; wherein, the plasma is argon plasma, and the etching power is 200W, and the etching power is 200W. The time is 10 minutes, and a conductive substrate with a loose single-layer colloidal crystal template placed thereon is obtained.

[0028] Step 2, first place the conductive substrate with a loose single-layer colloidal crystal template on it in the cobalt electrolyte, use it as the working electrode, and conduct the substrate at a current density of 2 μA / cm 2 Next, the three-electrode method was used for electrodeposition for 50 minutes (or 4 hours); wherein, the counter elec...

Embodiment 2

[0030] The concrete steps of preparation are:

[0031] Step 1, first place a single-layer colloidal crystal template composed of polystyrene colloidal spheres with a diameter of 2 μm on a conductive substrate; wherein the conductive substrate is conductive glass. Then place the conductive substrate with a single-layer colloidal crystal template on it in a plasma etching machine and use plasma to etch it; wherein, the plasma is argon plasma, and the etching power is 200W, and the etching power is 200W. The time is 28 minutes, and a conductive substrate with a loose single-layer colloidal crystal template placed thereon is obtained.

[0032] Step 2, first place the conductive substrate with a loose single-layer colloidal crystal template on it in the cobalt electrolyte, use it as the working electrode, and set the current density at 13 μA / cm 2The three-electrode method is used for electrodeposition for 40 minutes (or 3.3 hours); wherein, the counter electrode during electrodepo...

Embodiment 3

[0034] The concrete steps of preparation are:

[0035] Step 1, first place a single-layer colloidal crystal template composed of polystyrene colloidal spheres with a diameter of 2 μm on a conductive substrate; wherein the conductive substrate is conductive glass. Then place the conductive substrate with a single-layer colloidal crystal template on it in a plasma etching machine and use plasma to etch it; wherein, the plasma is argon plasma, and the etching power is 200W, and the etching power is 200W. The time is 35 minutes, and a conductive substrate with a loose single-layer colloidal crystal template placed thereon is obtained.

[0036] Step 2, first place the conductive substrate with a loose single-layer colloidal crystal template on it in the cobalt electrolyte, use it as the working electrode, and conduct the substrate at a current density of 25 μA / cm 2 Next, the three-electrode method was used for electrodeposition for 30 minutes (or 2.5 hours); wherein, the counter e...

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Abstract

The invention discloses a cobaltosic oxide micro-nano composite structure array and a manufacturing method thereof. A cobaltosic oxide bowl array or a cobaltosic oxide hollow sphere array which is loosely arrayed is arranged on a conductive substrate of the composite array, the surfaces of the conductive substrates among bowls or hollow spheres forming the bowl array or the hollow sphere array are coated with meshy cobaltosic oxide sheets; the diameter of the bowl opening of each cobaltosic oxide bowl is 1 to 30 mu m, the thickness of the wall of each cobaltosic oxide bowl is 10 to 100 nm, and the cobaltosic oxide bowls consist of the meshy cobaltosic oxide sheets; and the inner diameter of each cobaltosic oxide hollow sphere is 1 to 30 mu m, the thickness of a shell of each cobaltosic oxide hollow sphere is 20 to 300nm, the cobaltosic oxide hollow spheres consist of the meshy cobaltosic oxide sheets, and the thickness of each meshy cobaltosic oxide sheet is 5 to 20nm. The method comprises the following steps of: putting the conductive substrate on which a single-layer colloid crystal template is arranged into a plasma etching machine for etching for at least 10 minutes; putting the etched conductive substrate in a cobalt electrolyte; performing electro deposition at the current density of 2 to 50 mu A / cm<2> for 10 to 50min or 55min to 4h; and putting a product into a solvent to remove the template to obtain the target product. The composite array can be applied to magnetic devices and electrochemical reaction cavity carriers.

Description

technical field [0001] The invention relates to a composite structure array and a preparation method thereof, in particular to a micro-nano composite structure array of tricobalt tetroxide and a preparation method thereof. Background technique [0002] As a typical transition metal oxide, cobalt tetroxide has rich optical, electrical and magnetic properties, and has important application value in battery materials, magnetic devices, electrochromic and other fields. The micro-nano composite structure array has the advantages of microstructure array and nanostructure material at the same time. Its surface is uniform, the structure is stable, the coupling effect is strong, and the surface activity is high. It has important application value and can be widely used in high activity, high stability and Repeatable devices. Based on the above factors, people have made unremitting efforts to obtain micro-nano composite structure materials of cobalt trioxide, such as "Cobalt Oxide Or...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/04B81C1/00
Inventor 段国韬李越罗媛媛刘广强蔡伟平
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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