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Production method of composite infrared detector

A technology of infrared detectors and composite materials, which is applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of damage to device performance, multiple production processes, and damage to device performance, and reduce device production costs. , Good process repeatability and fast etching speed

Inactive Publication Date: 2015-04-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

In the process of patterning with dry / wet etching methods, different etching processes need to be selected for different materials, with many manufacturing processes and complicated processes; during the etching process, it is easy to leave The residue is not conducive to the growth of the next layer of thin film material, which will lead to the degradation of material performance and damage the device performance; during the etching process, the plasma / etching liquid will cause damage to the heat-sensitive thin film material, which will also lead to a decline in material performance and damage Device performance
Therefore, the process of making uncooled infrared detectors by dry / wet etching is complicated and inefficient, which will damage the device performance

Method used

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  • Production method of composite infrared detector
  • Production method of composite infrared detector
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Embodiment Construction

[0029] The composite material infrared detector made by laser etching provided by the present invention is composed of substrate 1, heat insulating layer 2, bottom electrode 3, heat sensitive film 4, upper electrode 5 and infrared absorbing layer 6, as attached figure 1 shown. It is characterized in that it includes at least the following sequential steps:

[0030] Step 1: Obtain a substrate 1 and a heat insulating layer 2 . The available materials for the substrate 1 are: silicon (Si) single crystal substrate, or strontium titanate (SrTiO 3 ) single crystal substrate, or lanthanum aluminate (LaAlO 3 ) single crystal substrate, or alumina (Al 2 o 3 ) single crystal substrate; the thickness of the substrate 1 is 0.01-10mm.

[0031] For the insulation layer 2, the materials that can be selected are: SiO 2 , or porous SiO 2 , or silicon nitride (Si 3 N 4 ), or PI; the corresponding preparation methods include uniform glue, or sputtering, or pulsed laser deposition (PLD),...

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Abstract

A production method of a composite infrared detector belongs to the technical field of electronic materials and elements. The production method include the steps of firstly, producing a substrate 0.01-10mm in thickness and a thermal insulation layer 100nm-50micron in thickness; secondly, producing a thermosensitive unit, including a thermosensitive film of PZT / PVD (lead zirconate titanate and polyvinylidene fluoride) composite pyroelectric material and electrodes, on the thermal insulation layer; thirdly, making an infrared absorbing layer on the surface of the thermosensitive unit; and fourthly, schematizing the thermosensitive film and the electrodes by laser etching. The production method is simple, can be used for massive low-temperature production of films, and meets the requirement for compatibility with ROICs (readout integrated circuits). The thermosensitive film is 15-20micron in thickness.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and components. Background technique [0002] Infrared detection technology is widely used in modern warfare, and has gradually realized the transformation to the civilian sector. Infrared imaging, infrared temperature measurement, infrared humidity measurement, infrared detection, infrared alarm, infrared detection, infrared night vision, etc. have been the advanced technologies used by all walks of life. Infrared technology is playing an increasingly important role in the civilian sector. In the infrared detection technology, the detector is the core, and its characteristics determine the performance and application fields of the supporting instruments and equipment. Pyroelectric materials commonly used in infrared detectors are BaSrTiO 3 (BST), PbSrTiO 3 (PST) and PbZrTiO 3 Ceramic materials such as (PZT) have the advantages of excellent pyroelectric performance, low dielectric...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 吴传贵蔡光强罗文博彭强祥孙翔宇柯淋张万里
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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