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Preparation method of lead-free piezoelectric thin film

A lead-free piezoelectric and thin-film technology, applied in solid-state chemical plating, metal material coating process, coating and other directions, can solve the problems of lead-containing films, and achieve the effect of simple equipment, low cost and low price.

Inactive Publication Date: 2018-01-30
HARBIN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing a lead-free piezoelectric film in order to solve the technical problem of lead-containing films with excellent ferroelectric properties

Method used

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  • Preparation method of lead-free piezoelectric thin film
  • Preparation method of lead-free piezoelectric thin film
  • Preparation method of lead-free piezoelectric thin film

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Experimental program
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Effect test

specific Embodiment approach 1

[0025] Specific embodiment one: the preparation method of the lead-free piezoelectric thin film of this embodiment is as follows:

[0026] 1. Add sodium acetate, potassium acetate and bismuth nitrate to acetic acid, then stir for 20min to 40min at a temperature of 55°C to 65°C and a stirring speed of 500r / min to 700r / min to obtain A solution;

[0027] Add tetrabutyl titanate to the mixed solution of ethylene glycol methyl ether and acetylacetone, control the speed at room temperature to 500r / min-700r / min and stir for 20min-40min, then add formamide, and continue stirring for 20min-40min to obtain B solution;

[0028] Mix A solution and B solution cooled to room temperature to obtain C solution, then add ethylene glycol methyl ether, adjust the concentration of C solution to 0.2mol / L~0.3mol / L, and then control the stirring speed at room temperature to 500r / min~700r / min stirring for 20min~40min, then aging for 24h to obtain bismuth sodium potassium titanate sol,

[0029] Amon...

specific Embodiment approach 2

[0035] Specific embodiment two: the difference between this embodiment and specific embodiment one is that the ratio of sodium acetate and acetic acid in step one is 0.048g g:1mL, the ratio of potassium acetate and acetic acid is 0.012g:1mL, the ratio of bismuth nitrate and acetic acid is 0.322g::1mL; the molar ratio of ethylene glycol methyl ether to tetrabutyl titanate is 4.61:1, the molar ratio of acetylacetone to tetrabutyl titanate is 1:1, the molar ratio of formamide to tetrabutyl titanate The molar ratio is 0.58:1. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0036] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that in step 1, the temperature is 60° C. and the stirring speed is 600 r / min for 30 minutes to obtain A solution. Others are the same as those in the first or second embodiment.

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Abstract

The invention discloses a preparation method of a lead-free piezoelectric film and relates to the preparation method of a highly-oriented lead-free piezoelectric film. The preparation method disclosed by the invention aims to solve the technical problem that a traditional film which is excellent in ferroelectric properties contains lead. The preparation method comprises the following steps: (1) preparing sodium-potassium bismuth titanate sol; (2) preparing lanthanum nickelate sol; (3) preparing a crystallized LNO seed layer; (4) preparing an NKBT film; (5) preparing a plurality of NKBT film layers regulated by the LNO seed layer; (6) preparing the lead-free piezoelectric film. In a film system prepared by the preparation method disclosed by the invention, the content of heavy metal lead is zero, so the prepared film belongs to a sustainable development and pollution-free material. The preparation method disclosed by the invention belongs to the field of preparation of piezoelectric films.

Description

technical field [0001] The invention relates to a preparation method of a high orientation lead-free piezoelectric film. Background technique [0002] The widely used ferroelectric materials usually contain a high proportion of lead, which is a fatal threat to the environment and human health. Lead-free NKBT has a high room temperature Curie temperature and strong electrical properties, such as ferroelectricity, pyroelectricity, etc. NKBT films prepared by sol-gel method have excellent electrical properties. NKBT thin films have been widely used in various power electronic devices, such as pyroelectric infrared radiation detectors, because devices based on NKBT thin films have some important advantages: such as room temperature operation, fast response from near-ultraviolet to far-infrared spectra, good sensitivity, Low cost, simple equipment structure, etc. Contents of the invention [0003] The object of the present invention is to provide a preparation method of a le...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C20/08
CPCC23C20/08
Inventor 迟庆国张永泉马涛陈阳董久峰刘刚王暄
Owner HARBIN UNIV OF SCI & TECH
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